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Exposure method and device for wafer focus compensation

A focus compensation and exposure method technology, applied in the semiconductor field, can solve problems such as affecting other chip graphics, achieve good graphics effects and avoid defects

Active Publication Date: 2018-03-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main purpose of the present invention is to provide an exposure method and device for wafer focus compensation, so as to solve the problem in the prior art that the graphics of other chips are affected when the edge chip defocus is processed in the second half of the process.

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  • Exposure method and device for wafer focus compensation
  • Exposure method and device for wafer focus compensation

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Embodiment Construction

[0020] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0021] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0022] For the convenience of description, spatially relative terms may be used here...

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Abstract

The invention provides an exposure method and device for focusing compensation of a wafer. The exposure method for focusing compensation of the wafer comprises the following steps of S1, acquiring a distance Rn from a center of each chip in the wafer to a circle center of the wafer, wherein n is a natural number; S2, calculating a focusing compensation value Fn of each chip according to a focusing compensation formula Fn=A*Rn, wherein A is a compensation coefficient; and S3, exposing each chip according to the corresponding focusing compensation value. By the exposure method, the focusing compensation value Fn of each chip is calculated, each chip is placed at the optimal focal length position of an exposure unit according to the calculated Fn, and finally, a pattern formed on each chip is further relatively good in effect; and all chips at the edge of the wafer are prevented from being exposed according to the same focusing compensation value, and the problem of pattern defect occurring in some chips is further prevented.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an exposure method and device for wafer focus compensation. Background technique [0002] At present, the chemical mechanical polishing (Chemical Mechnical Polish, CMP) in the back-end process of the wafer cannot control the rate of mechanical polishing well, and the polishing rate of the edge of the wafer is much higher than that of the center of the wafer, resulting in that the central area of ​​the wafer is faster than the edge area of ​​the wafer. The thickness is much larger. After forming the sixth metal interconnection copper structure of the 40nm chip, the thickness at 2mm from the edge of the wafer is 973nm smaller than the thickness at the center of the wafer, and the thickness at 3mm from the edge of the wafer is 414nm smaller than the thickness at the center of the wafer. [0003] After CMP, the wafer needs to be patterned. Due to the large thickness difference between ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F7/207
Inventor 解立涛张宏伟
Owner SEMICON MFG INT (SHANGHAI) CORP
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