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LED epitaxial p-layer growth method

A growth method and epitaxy technology, applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of low hole concentration and limitation of LED brightness improvement, and achieve hole concentration improvement and activation The effect of improving efficiency

Active Publication Date: 2018-10-12
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The hole concentration of traditional LED epitaxial P layer design method is not high, therefore, the improvement of LED brightness has been limited

Method used

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  • LED epitaxial p-layer growth method

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Experimental program
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Effect test

Embodiment 1

[0047] The invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0048] A kind of LED epitaxial P layer growth method, see figure 1 , including: processing the substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a light-emitting layer, growing a P-type AlGaN layer, and growing a Si 3 N 2 / Mg 2 N 3 / pGaN superlattice la...

Embodiment 2

[0057] The application examples of the LED epitaxial P layer growth method of the present invention are provided below, and its epitaxial structure can be found in figure 2 , growth method see figure 1 . Using MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0058] Step 101, processing the substrate:

[0059] H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction c...

Embodiment 3

[0084] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0085] The growth method of conventional LED epitaxy is (see the epitaxial layer structure image 3 ):

[0086] 1. H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the sapphire substrate for 8min-10min.

[0087] 2.1. Lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow rate at 10000sccm-20000sccm NH 3 , 50sccm-100sccm TMGa, 100L / min-130L / min H 2 , grow a low-temperature buffer layer GaN with a thickness of 20nm-40nm on a sapphire substrate.

[0088] 2.2. Raise the temperature to 1000°C-1100°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow at 30000sccm-40000sccm NH 3 And 100L / min-130L / min H 2 , keeping the temperature stable, annealing the low-temperature buffer layer GaN for 3...

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Abstract

The invention discloses an LED epitaxial P layer growth method. The method sequentially includes the steps that a substrate is processed, a low-temperature buffer layer GaN grows, a non-doped GaN layer grows, a Si-doped N type GaN layer grows, a light emitting layer grows, a P type AlGaN layer grows, a Si3N2 / Mg2N3 / pGaN superlattice layer grows, and cooling is conducted. According to the scheme, a P layer is designed to be the Si3N2 / Mg2N3 / pGaN superlattice layer, so Mg activation efficiency of the whole p layer is greatly improved, hole concentration is increased, the condition that existing p layers are low in Mg doping efficiency and low in hole concentration is changed, accordingly the voltage of an LED is reduced, brightness is obviously improved, and the antistatic yield is also increased.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, and in particular, relates to a method for growing an LED epitaxial P layer. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ;The demand for LED brightness and luminous efficiency is increasing day by day in the market. What customers are concerned about is that LEDs are more power-saving, have higher brightness and better luminous efficiency, which puts forward higher requirements for LED epitaxial growth; how to grow better epitaxial wafers It has been paid more and more attention because the performance of LED devices can be improved due to the improveme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/04H01L33/00H01L21/205C23C16/44C23C16/52
CPCC23C16/44C23C16/52H01L33/0075H01L33/04
Inventor 张宇
Owner XIANGNENG HUALEI OPTOELECTRONICS