mlc STT-MRAM data writing method and device, data reading method and device
A data writing and data technology, applied in the field of memory, can solve the problems of poor efficiency and effect, achieve data optimization, reduce writing energy consumption, and reduce energy consumption
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[0046] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:
[0047] Under the premise that the decoded data is the same as the original data: the encoding and writing steps of MLC STT-MRAM data are as follows:
[0048] 1) When new data is written from the cache back to the main memory, it will first be transferred to the write queue to wait for writing. The width of the data to be written is the size of a cache line. When a certain data in the write queue is to be written into the memory, the memory controller will first read the old data at the corresponding address, and then compare it with the new data to be written.
[0049] 2) By comparing the old and new data, the number of magnetization states of the hard area of the cell changed and the number of magnetization states of the hard area of the cell not changed in each data state are obtained. Eight values need to be obtained, which are the data states of the...
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