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A Method for Optimizing Wafer Annular Defects

A ring-shaped and defect technology, applied in the field of optimizing wafer ring-shaped defects, can solve the problems of high surface tension of grooves and polymer falling on the upper plate, and achieve the effect of eliminating the source.

Active Publication Date: 2018-06-26
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the normal running process, due to the high surface tension of the groove, the polymer on the upper plate will also have the risk of falling and causing ring defects.

Method used

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  • A Method for Optimizing Wafer Annular Defects
  • A Method for Optimizing Wafer Annular Defects
  • A Method for Optimizing Wafer Annular Defects

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Embodiment Construction

[0034] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0035] The invention discloses a method for optimizing shallow trenches to etch ring-shaped defects in wafers. The method is suitable for vacuum maintenance of the chamber, and the polymer on the pole plate on the chamber is easy to fall and form due to loose reaction with water vapor in the air. In the case of ring defects; similarly, this method is also applicable to the case of ring defects in the normal running process.

[0036] In the present invention, after the vacuum maintenance of the cavity, the side wall of the cavity is repeatedly cleaned with low vacuum pressure, high-flow gas and high-power plasma, so that the suspended water vapor and the original etching polymer C-O and Si-O are stripped The cavity, and then use high vacuum press...

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Abstract

The invention provides a method for optimizing an annular defect of a wafer. The method comprises the steps of 1, performing cavity vacuum maintenance on a shallow groove etching cavity applying a radio frequency coil annular structure; 2, repeatedly cleaning a side wall of the cavity with first gas high-power plasma under a first vacuum pressure so that suspended moisture and an etching polymer resided on the side wall are stripped from the cavity; and 3, repeatedly cleaning an upper pole plate of the cavity with second gas high-power plasma under a second vacuum pressure so that suspended moisture in an annular groove of the upper pole plate and an etching polymer resided on the upper pole plate are stripped, wherein the second vacuum pressure is larger than the first vacuum pressure.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for optimizing wafer ring defects. Background technique [0002] In the existing 12" equipment, in order to improve the uniformity of wafer etching, the ring design of the radio frequency coil is generally adopted, and the radio frequency coil adopts the ring design of the inner and outer rings. [0003] In the shallow trench etching process, the gas containing F (such as CF4, CHF3, SF6, etc.) is used to etch the upper plate made of quartz while etching the wafer. In the place close to the radio frequency coil, the etching plasma is more concentrated, and the etching is faster, forming an annular groove corresponding to the coil. The trench is easy to deposit etch polymer. After the vacuum maintenance of the cavity, due to long-term contact with water vapor in the air, the polymer becomes loose and easy to fall, forming ring-sha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/32853H01J37/32862
Inventor 许进唐在峰冯奇艳任昱吕煜坤
Owner SHANGHAI HUALI MICROELECTRONICS CORP