A grinding pressure compensation method for a chemical mechanical grinding machine

Abstract

The invention provides a grinding pressure compensation method for a chemical mechanical grinding machine. The method comprises the following steps that in a grinding process, thickness changes of a grinding pad are detected according to the stroke of a grinding disc; and grinding pressure is adjusted according to the different thicknesses of the grinding pad. According to the grinding pressure compensation method for the chemical mechanical grinding machine, the stroke of the grinding disc is measured through a sensor arranged on the grinding disc, the thickness changes of the grinding pad are calculated through the difference value between the practical stroke of the grinding disc in the grinding process and an original stroke value obtained during replacement of a new grinding pad, and the grinding pressure is adjusted according to the thickness changes of the grinding pad. The pressure is adjusted according to the thickness changes of the grinding pad, and it is ensured that the grinding speed is stable.

Description

technical field [0001] The invention relates to a chemical mechanical polishing process in the field of semiconductor integrated circuit manufacturing, and in particular to a grinding pressure compensation method for a chemical mechanical grinding machine. Background technique [0002] In the manufacturing process of integrated circuits, various layer structures such as semiconductor layers, conductive layers, and oxide layers are usually deposited sequentially on a silicon wafer. After each layer is deposited, an etching process may be required to form the desired pattern to form the circuit elements. The etching process can lead to uneven or non-uniform surfaces of the deposited layers, which can create defects during subsequent process steps. Therefore, it is necessary to planarize the surface of the device. [0003] Chemical mechanical polishing is a common process used to planarize device surfaces. Fixed abrasive chemical mechanical polishing equipment requires the u...

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Problems solved by technology

[0004] In the process of chemical mechanical polishing, as the usage time of the polishing pad increases, the thickness of the polishing pad will become thinner, and at the same time, the depth of the groove of the polishing liquid will decrease, which will lead to a decrease in the polishing rate, which will have a negative impact on the uniformity of the wafer. Easy to produce defects and reduce production yield

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