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Method for preparing transmission electron microscope samples

A technology for transmission electron microscope samples and circuit units, which is applied in the field of semiconductor manufacturing and can solve problems such as the inability to prepare large-area flat transmission electron microscope samples.

Inactive Publication Date: 2017-02-22
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing TEM samples to solve the problem that large-area planar TEM samples cannot be prepared now

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  • Method for preparing transmission electron microscope samples
  • Method for preparing transmission electron microscope samples
  • Method for preparing transmission electron microscope samples

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Embodiment Construction

[0034] The preparation method of the transmission electron microscope sample proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0035] The invention provides a preparation method of a transmission electron microscope sample, which is used to prepare a large-area transmission electron microscope sample, so as to provide a transmission electron microscope for large-area observation (mm 2 Level) to find the failure structure, the specific flow diagram is as follows figure 1 shown. The preparation method of described transmission electron microscope sample compris...

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Abstract

The invention provides a method for preparing transmission electron microscope samples. The method includes adhering a metal ring on the front surface of a chip; peeling off portions from the back surface of the chip to required-to-be-observed structural layers; removing portions, positioned on the outer periphery of the metal ring, of the chip and reserving the metal ring and portions, positioned in the metal ring, of the chip so as to obtain the ultimate transmission electron microscope samples. The method has the advantages that thin areas are formed inside the integral metal ring at the moment, the areas of the samples further can reach the mm<2> levels, accordingly, effects of observing the samples by the aid of transmission electron microscopes on large areas can be realized, the samples can be observed by the aid of the transmission electron microscopes on the large areas, and failure structures can be searched.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for preparing a transmission electron microscope sample. Background technique [0002] Transmission Electron Microscopy (abbreviated as TEM, referred to as TEM) has become a very important tool for material structure analysis and semiconductor failure analysis in the advanced process semiconductor industry due to its ultra-high resolution and strong analysis functions. means. Among them, the most important thing in the analysis process of TEM is the preparation of TEM samples. [0003] In the process of semiconductor failure analysis, it is first necessary to prepare the chip failure address with a thickness of about 0.1um and an area of ​​about 30um 2 ~200um 2 samples, and then observe whether there are structural abnormalities in the samples through a transmission electron microscope. The area range of sample preparation for existing transmissio...

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Application Information

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IPC IPC(8): G01N1/28
CPCG01N1/28G01N1/286G01N2001/2866
Inventor 高慧敏张顺勇汤光敏卢勤
Owner WUHAN XINXIN SEMICON MFG CO LTD