Copper Alloy Bonding Wire

A technology of copper alloy and bonding wire, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., to achieve the effect of stable position, stable shape, and shortened bonding step time
CN106486447BInactive Publication Date: 2020-03-03TANAKA DENSHI KOGYO KK
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TANAKA DENSHI KOGYO KK
Publication Date
2020-03-03
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a copper alloy bonding wire, the copper alloy crystal grains per unit cross-sectional area are 50-250, the maximum grain size is less than 1 / 3 of the diameter of the bonding wire, and the specific direction is less than 40%. of no directionality.
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Description

technical field

[0001] The present invention relates to a copper alloy bonding wire suitable for connecting an electrode of an IC chip used in a semiconductor device to a substrate such as an external lead frame. Background technique

[0002] In general, a method called ball bonding is used for the first bonding of copper bonding wires and electrodes, and a method called wedge bonding is used for bonding copper bonding wires and wiring on a circuit wiring board for semiconductors. For wedge welding. The first bonding is to apply a thermal arc from a torch electrode to the tip of the wire in the form of electronic frame off (EFO), so that the tip of the wire forms a positive ball called a solder ball (FAB). Next, ultrasonic waves (ultrasonic waves) are applied while pressing this FAB onto an aluminum pad heated in a temperature range of 150 to 300° C. by a capillary, so that a bonding wire is bonded to the aluminum pad.

[0003] Next, the solder pin is raised while pulling ...

Claims

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