Measuring Method of Infrared Radiation Film Transmittance Based on Infrared Thermal Imager

Abstract

The invention provides an infrared radiation film transmittance measuring method based on an infrared thermal imager. The method at least includes the steps: providing a radiating substrate covered with an infrared radiation film; respectively acquiring two groups of exitance data of the radiating substrate at different surface temperatures in the same indoor environment; calculating transmittance of the infrared radiation film by using the two groups of exitance data. Each group of exitance data at least includes total infrared radiation exitance, radiation exitance of the infrared radiation film, reflected exitance of an ambient environment for the surface of the infrared radiation film, and radiation exitance of the radiating substrate through the infrared radiation film. The emissivity of the infrared radiation film and the transmittance of radiation energy of the radiating substrate through the infrared radiation film can be measured, so that a better infrared radiation film can be designed in a targeted manner, the radiating efficiency of a power device is enhanced, and the junction temperature of a chip is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for measuring the transmittance of an infrared radiation film based on an infrared thermal imager. Background technique [0002] In modern society, power devices are used in more and more fields, and the applied power is increasing (today it has reached more than 100W). Most of the electric energy is converted into heat, which makes the junction temperature of the chip rise rapidly. When the temperature exceeds the maximum allowable temperature , the device will be damaged due to overheating. The problem of heat dissipation has become the key to the packaging of power devices, and it is an urgent problem to be solved. [0003] When the power device is working normally, using the heat dissipation substrate is an effective method for heat transfer of the device, and the temperature of the heat dissipation substrate is generally required not to exceed 60°C. Deposit...

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for measuring the transmittance of an infrared radiation film based on an infrared thermal imager, which is used to solve the problem that the radiation energy transmission of the heat dissipation substrate cannot be measured in the prior art. The problem of transmittance of infrared radiation film

Images