Write operation method and device of Flash memory

A technology of write operation and flash memory, applied in memory system, memory address/allocation/relocation, instruments, etc., can solve the problems of short service life and less erasable times of flash memory

Active Publication Date: 2017-03-15
SHANGHAI EASTSOFT MICROELECTRONICS
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when using Flash memory as a data storage for data storage, since the stored data will often change, it is necessary to frequently perform operations such as data writing and erasing, but Flash memory can be erased less often and has a shorter service life

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  • Write operation method and device of Flash memory
  • Write operation method and device of Flash memory
  • Write operation method and device of Flash memory

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Embodiment Construction

[0039] When the flash memory is used as a data memory for data storage, since the stored data will often change, operations such as data writing and erasing need to be performed frequently. In the prior art, due to the technical characteristics of the Flash flash memory, the number of erasable times of the Flash memory is limited. Usually, the number of erasable times of the Flash memory is 100,000 times, which is far less than the 1 million times of erasable times of the EEPROM. Therefore, the lifespan of Flash memory is short.

[0040]In the embodiment of the present invention, when the data to be written cannot be written in the target address, a blank column address is searched on the Flash page where the target address is located, and the data to be written is written into the blank column address. That is to say, when data cannot be written in the target address corresponding to the EEPROM address, the write operation of the data to be written is performed by searching f...

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Abstract

The invention discloses a write operation method and device of a Flash memory. A page of the Flash memory is of a matrix structure consisting of rows and columns; and each row corresponds to an EEPROM (Electrically Erasable Programmable Read-Only Memory) address. The method comprises the following steps: receiving a write operation instruction for the EEPROM address, and acquiring a target address corresponding to the EEPROM address in the Flash memory; judging whether data to be written corresponding to the write operation instruction can be written into the target address; when the data to be written corresponding to the write operation instruction can be written into the target address, writing the data to be written into the target address; and when the data to be written cannot be written into the target address, searching a blank column address on the page of the Flash memory where the target address is positioned, and writing the data to be written into the blank column address. The scheme can effectively reduce the number of erase times of the Flash memory and prolong the service life of the Flash memory.

Description

technical field [0001] The present invention relates to the field of chip design, in particular to a flash memory writing operation method and device. Background technique [0002] In existing chip design, Flash is usually used as program memory, and Electrically Erasable Programmable Read-Only Memory (EEPROM) is used as data memory, which is determined by the characteristics of the two types of memory . The biggest difference between Flash memory and EEPROM is: Flash memory is erased by sector, while EEPROM is erased by byte. Since Flash memory is erased in blocks by sectors, it is suitable for storing some programs with small changes, so it is suitable for program memory. However, EEPROM has a small capacity and can be erased by byte, so EEPROM is suitable for storing some frequently changing parameters, variables, etc., so it is suitable for data storage. [0003] Compared with EEPROM, the price of Flash memory is relatively low, and under the same wafer area, Flash me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/06G06F12/02
CPCG06F12/0246G06F12/0646
Inventor 陈诚陈光胜
Owner SHANGHAI EASTSOFT MICROELECTRONICS
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