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Semiconductor device with electrostatic discharge protection structure

A protection structure, electrostatic discharge technology, used in semiconductor devices, electrical solid devices, electrical components, etc.

Active Publication Date: 2017-04-05
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a semiconductor device with an electrostatic discharge protection structure for the problem that the traditional process needs to deposit a thicker dielectric layer for CMP

Method used

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  • Semiconductor device with electrostatic discharge protection structure
  • Semiconductor device with electrostatic discharge protection structure
  • Semiconductor device with electrostatic discharge protection structure

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Embodiment Construction

[0017] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0019] The in...

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PUM

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Abstract

The invention relates to a semiconductor device with an electrostatic discharge protection structure, which comprises a diode connected between a gate and a source of the semiconductor device. The diode comprises a diode main body and two connection parts connected onto two ends of the diode main body for being electrically connected with the gate and the source; two mutually-separated insulation pads are arranged on a substrate; an insulation layer is arranged on the surface of the substrate between the two insulation pads; the diode main body is arranged on the insulation layer; each connection part extends to the insulation pad at the side from one end of the diode main body; a dielectric layer is arranged on the diode and the two insulation pads; and a metal wire layer is arranged on the dielectric layer. The wholly-deposited dielectric layer is thinner, the process difficulty for corroding a contact hole at the thick medium is correspondingly reduced, and the productivity is improved while the cost is reduced.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a semiconductor device with an electrostatic discharge protection structure. Background technique [0002] The ESD protection structure on the current mainstream double diffused metal oxide semiconductor field effect transistor (DMOSFET) device with ESD (Electro-Static discharge, electrostatic discharge) protection is realized by making diodes on polysilicon, and its structure is as follows: figure 1 As shown, a diode is connected in parallel between the source and gate of the device. In order to electrically insulate the diode from other cell circuits, it is required to form a certain thickness of insulating layer under the diode on the wafer during manufacture, resulting in this area being higher than other die areas. As the semiconductor process enters a generation of thinner line width, its dielectric process also enters a relatively advanced chemical mechanical poli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0255H01L27/0296H01L29/0657H01L29/16H01L29/7801H01L29/866H01L27/0629
Inventor 卞铮
Owner CSMC TECH FAB2 CO LTD