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Lateral high voltage integrated devices having trench insulation field plates and metal field plates

一种集成器件、金属场板的技术，应用在半导体器件、半导体/固态器件零部件、电气元件等方向，能够解决LDMOS晶体管电流驱动能力劣化、LDMOS晶体管导通电阻增大等问题

Active Publication Date: 2017-04-19
HYNIX SYST INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, the current drive capability of the LDMOS transistor may deteriorate, and the on-resistance (Ron) of the LDMOS transistor increases

Method used

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  • Lateral high voltage integrated devices having trench insulation field plates and metal field plates
  • Lateral high voltage integrated devices having trench insulation field plates and metal field plates
  • Lateral high voltage integrated devices having trench insulation field plates and metal field plates

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Embodiment Construction

[0028] It will be understood that, although the terms first, second, third etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments could be termed a second element in other embodiments without departing from the teachings of the present invention.

[0029] It will also be understood that when an element is referred to as being "on," "over," "above," "under," "below," "below," "side," or "beside" another element, its The other element mentioned can be in direct contact, or there can also be at least one intermediate element in between. Accordingly, terms such as "on", "over", "above", "under" or "under", "under", "side", "beside", etc. are used herein only for the purpose of describing two elements. The purpose of the positional relationship is not intended to limit the scope of the present invention.

[0030] It will...

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PUM

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Abstract

A high voltage integrated device includes a source region and a drain region disposed in a semiconductor layer and spaced apart from each other, a drift region disposed in the semiconductor layer and surrounding the drain region, a channel region defined in the semiconductor layer and between the source region and the drift region, a trench insulation field plate disposed in the drift region, a recessed region provided in the trench isolation field plate, a metal field plate disposed over the trench insulation field plate, and filling the recessed region, a gate insulation layer provided over the channel region and extending over the drift region and over the trench insulation field plate, and a gate electrode disposed over the gate insulation layer.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2015-0140942 filed on October 7, 2015, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments of the present invention relate to lateral high voltage integrated devices, and in particular, to lateral high voltage integrated devices having trench isolation field plates and metal field plates. Background technique [0004] An integrated device that has both the functions of a controller and a driver is called an intelligent power device. Typically, the output circuit of a smart power device can be designed to include a high-voltage integrated device operating at a high voltage, for example, a lateral double-diffused MOS (LDMOS) transistor. In high-voltage integrated devices, the breakdown voltage (eg, drain junction breakdown voltage and gate dielectric breakdown voltage) of an LDMOS transistor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/7823H01L29/404H01L29/7835H01L29/0869H01L29/0653H01L29/1045H01L29/407H01L23/535
Inventor 朴圣根
Owner HYNIX SYST INC