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Semiconductor structure with intercalated layer and method of manufacturing the same

A technology of semiconductor and intercalation layer, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Active Publication Date: 2019-10-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, while existing semiconductor fabrication processes are often adequate for their intended purposes, they are not fully satisfactory in all respects as devices continue to be scaled down

Method used

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  • Semiconductor structure with intercalated layer and method of manufacturing the same
  • Semiconductor structure with intercalated layer and method of manufacturing the same
  • Semiconductor structure with intercalated layer and method of manufacturing the same

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Embodiment Construction

[0013] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. An instance of a component such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship bet...

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PUM

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Abstract

Semiconductor structures and methods of forming the same are provided. The semiconductor structure includes a substrate, an interface layer formed over the substrate, and an interposer layer formed over the interface layer. The semiconductor structure also includes a gate dielectric layer formed over the interposer layer and a gate structure formed over the gate dielectric layer. In addition, the insertion layer consists of M 1 O x made, and M 1 is a metal, O is oxygen, and x is a value greater than 4. Embodiments of the present invention also relate to semiconductor structures having insertion layers and methods of fabricating the same.

Description

technical field [0001] Embodiments of the present invention relate to integrated circuit devices, and more particularly, to semiconductor structures having intervening layers and methods of fabricating the same. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and layers of semiconducting material over a semiconductor substrate and patterning the individual material layers using photolithography to form circuit components and elements on the individual material layers. [0003] However, while existing semiconductor fabrication processes are generally adequate for their intended purposes, they are not completely satisfactory in all respects as devices continue to be scaled down. Contents of the invention [0004] A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/51H01L21/28
CPCH01L29/401H01L29/42364H01L29/517H01L21/28194H01L29/66545H01L29/513H01L29/7843H01L29/785H01L29/4232H01L29/4234H01L21/28158
Inventor 连承伟王智麟郭康民林智伟
Owner TAIWAN SEMICON MFG CO LTD