Photosensitive assembly, fingerprint recognition panel and apparatus
A photosensitive component and fingerprint recognition technology, applied in the photosensitive field, can solve problems such as noise interference
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Embodiment 1
[0043] Such as image 3 As shown, the isolation dielectric layer 100 includes a first insulating layer 101 , a second insulating layer 102 and a light shielding portion 200 .
[0044] Wherein, the first insulating layer 101 is located between the first electrode 201 and the PIN semiconductor layer 203, the PIN semiconductor layer 203 is connected to the first electrode 201 through a via hole located on the first insulating layer 101, and the first insulating layer 101 covers at least The thin film transistor 30 and the first electrode 201 are not in contact with the part of the PIN semiconductor layer 203 .
[0045] The second insulating layer 102 is located between the first transparent conductive pattern 2021 and the second transparent conductive pattern 2022, the second insulating layer 102 at least covers the side of the PIN semiconductor layer 203 that is not in contact with the first insulating layer 101, and is insulated from the first The layer 101 is in contact, that...
Embodiment 2
[0056] Such as Figure 5 As shown, the isolation dielectric layer 100 includes a first insulating layer 101 and a light shielding portion 200 .
[0057] Wherein, the first insulating layer 101 is located between the first transparent conductive pattern 2021 and the second transparent conductive pattern 2022; the first insulating layer 101 at least covers the thin film transistor 30, the part of the first electrode 201 that is not in contact with the PIN semiconductor layer 203 and side of the PIN semiconductor layer 203 .
[0058] The light shielding portion 200 is located between the first insulating layer 101 and the second transparent conductive pattern 2022 , and the light shielding portion 200 is disposed on the side of the PIN semiconductor layer 203 . In this way, the light can only be incident on the PIN semiconductor layer through the second electrode after being reflected by the finger, and cannot directly pass through the light-shielding portion on the side of the ...
Embodiment 3
[0068] Such as Figure 7 As shown, the isolation dielectric layer 100 includes a first insulating layer 101 and a light shielding portion 200 .
[0069] The first insulating layer 101 is located between the first electrode 101 and the PIN semiconductor layer 203, and the PIN semiconductor layer 203 is connected to the first electrode 101 through a via hole located on the first insulating layer 101; the first insulating layer 101 at least covers the thin film transistor 30 and the portion of the first electrode 101 not in contact with the PIN semiconductor layer 203 .
[0070] The light-shielding part 200 is mainly made of black insulating material, and is located between the first transparent conductive pattern 2021 and the second transparent conductive pattern 2022. The light-shielding part 200 covers at least the side of the PIN semiconductor layer 203, and the second transparent conductive pattern 2022 passes through the light-shielding part. The via hole A on 200 is conne...
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