A high power igbt device
A high-power and device technology, applied in the field of high-power IGBT devices, can solve the problems of inconvenient disassembly, influence of components, poor versatility, etc., to achieve the effect of ensuring rapid heat dissipation and shielding external electromagnetic interference
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no. 1 example
[0028] see figure 1 and 2 , a high-power IGBT device, has an injection molded housing 1, a ceramic carrier 5, a plurality of high-power chips 4 and heat dissipation silica gel 2, wherein the injection molded housing 1 has a chip accommodating cavity, and the chip The accommodating cavity is a cuboid cavity surrounded by a bottom wall and four side walls; the ceramic carrier 5 is fixedly arranged on the bottom surface of the chip accommodating cavity, and partially embedded in the four side walls, This can prevent heat dissipation working fluid from entering the chip accommodating cavity, causing corrosion and other hazards; the plurality of high-power chips 4 are fixed on the ceramic carrier 5 through heat-conducting silicone grease; The chip accommodating cavity is coplanar with the top surface of the injection molding housing; the plurality of pins 3 of the plurality of high-power chips 4 are bent at 90 degrees and protrude from the top surface of the injection molding hous...
no. 2 example
[0033] see Figure 5 , a high-power IGBT device, has an injection molded housing 1, a ceramic carrier 5, a plurality of high-power chips 4 and heat dissipation silica gel 2, wherein the injection molded housing 1 has a chip accommodating cavity, and the chip The accommodating cavity is a cuboid cavity surrounded by a bottom wall and four side walls; the ceramic carrier 5 is fixedly arranged on the bottom surface of the chip accommodating cavity, and partially embedded in the four side walls, This can prevent heat dissipation working fluid from entering the chip accommodating cavity, causing corrosion and other hazards; the plurality of high-power chips 4 are fixed on the ceramic carrier 5 through heat-conducting silicone grease; The chip accommodating cavity is coplanar with the top surface of the injection molding housing; the plurality of pins 3 of the plurality of high-power chips 4 are bent at 90 degrees and protrude from the top surface of the injection molding housing 1;...
no. 3 example
[0036] The structure is similar to that of the second embodiment, the difference is that there are a plurality of vertical channels 11 communicating with the plurality of heat dissipation channels 6 on the outside of the four side walls of the carrier sheet 5, and the plurality of vertical channels 11 are connected to each other. The channel 11 is perpendicular to the plurality of cooling channels 6 , and the plurality of vertical channels 11 communicate with each other through an annular channel (not shown).
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