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High-speed infrared image sensor readout circuit

A technology of infrared image and readout circuit, which is applied in image communication, television, electrical components, etc., can solve the problems of limiting the readout speed and inapplicability of photogenerated voltage, and achieve the effect of saving readout processing time and improving accuracy

Active Publication Date: 2017-05-31
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

These architectures need to integrate the photo-generated current to the capacitor, which requires a certain integration time, so the readout speed of the photo-generated voltage is limited, and it becomes unsuitable for applications that require high-speed readout.

Method used

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  • High-speed infrared image sensor readout circuit
  • High-speed infrared image sensor readout circuit
  • High-speed infrared image sensor readout circuit

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Embodiment Construction

[0026] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0027] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a schematic circuit diagram of a high-speed infrared image sensor readout circuit in a preferred embodiment of the present invention. Such as figure 1 As shown, a high-speed infrared image sensor readout circuit of the present invention includes a photogenerated voltage generation module, as shown in the structure in the dotted line frame 1 in the figure, and an output drive module connected to the photogenerated voltage generation module, as shown in the dotted line frame in the figure 2 shown in the structure. The photo-generated voltage generation module is used to convert the impedance change of the infrared photosensitive unit when receiving infrared radiation into a photo-generated voltage change; the output driv...

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Abstract

The invention discloses a high-speed infrared image sensor readout circuit comprising a photovoltage generating module and an output driving module, wherein the photovoltage generating module is used for converting an impedance change of an infrared light sensing unit receiving infrared irradiation into a photovoltage change, and the output driving module is used for outputting the photovoltage change of the next stage. The readout circuit disclosed by the invention can effectively improve the readout speed of an infrared image sensor and can reduce the influence of process changes to the output, and thus the readout circuit is suitable for popularization and use.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a high-speed infrared image sensor readout circuit. Background technique [0002] Due to the use of the special properties of infrared rays, infrared image sensors have been widely used in many fields such as meteorological monitoring, medical detection, military detection, and fire monitoring. With the advancement of semiconductor technology, infrared image sensor chips have achieved great success. Due to its small size and convenient application, it has gradually become the mainstream of the industry. [0003] The infrared image sensor uses the on-chip infrared photosensitive array to receive the change of infrared rays, and then converts the change of the photo-generated current of each pixel point into a photo-generated voltage through the readout circuit, and then uses ADC (Analog-to-Digital Converter) to perform analog-to-digital conversion on the photo-generated volta...

Claims

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Application Information

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IPC IPC(8): H04N5/378H04N5/33
CPCH04N5/33H04N25/75H04N25/77
Inventor 段杰斌袁庆温建新蒋宇
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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