Transparent conductive wiring and method for producing transparent conductive wiring
A technology of transparent conduction and wiring, which is applied in the direction of cable/conductor manufacturing, semiconductor/solid-state device manufacturing, chemical instruments and methods, etc. It can solve the problem of large amount of overetching of metal films, inability to fully ensure electrical conductivity, and variation of overetching of metal films. Large and other problems, to achieve the effect of ensuring electrical conductivity, excellent visual transmittance, and suppressing the amount of overetching
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Embodiment 1
[0101] A laminated film having a configuration (three-layer structure of a transparent conductive oxide film, an Ag film, and a transparent conductive oxide film) shown in Table 1 was produced as follows.
[0102] When forming the Ag film, sputtering targets having compositions corresponding to the Ag film shown in Table 1 were prepared. In addition, the target size was made into diameter phi: 4 inches x thickness t: 6 mm.
[0103] In addition, the following transparent conductive oxide sputtering targets were used for the transparent conductive oxide film.
[0104] ITO: an oxide sintered body target of In and Sn containing 10 atomic % of Sn relative to the sum of In and Sn.
[0105] IZO: An oxide sintered body target of In and Zn containing 30 atomic % of Zn relative to the sum of In and Zn.
[0106] ZTO: an oxide sintered body target of Zn and Sn containing 50 atomic % of Sn relative to the sum of Zn and Sn.
[0107] AZO: an oxide sintered target of Zn and Al containing 2...
Embodiment 2
[0137] Next, transparent conductive wirings having the structure shown in Table 2 (three-layer structure of transparent conductive oxide film, Ag film, and transparent conductive oxide film) were produced by the same method as in Example 1, Nos. 1 to 7. .
[0138] About the obtained transparent conductive wiring, the possibility of etching using an oxalic-acid etchant was evaluated. In addition, after optical microscope observation and SEM observation were performed on the transparent conductive wiring after etching, the case where no residue was confirmed and the amount of overetching was 1 μm or less was evaluated as "A", and the case where etching was possible but was observed by optical microscope observation and SEM observation was evaluated as "A". As a result of the results, the case where etching residue was confirmed was evaluated as "B", and the case where the three layers (transparent conductive oxide film, Ag film, transparent conductive oxide film) could not be et...
Embodiment 3
[0146] Next, transparent conductive wirings having the structure shown in Table 3 (three-layer structure of transparent conductive oxide film, Ag film, and transparent conductive oxide film) were produced by the same method as in Example 1, Nos. 1 to 7. .
[0147] About the obtained transparent conductive wiring, the possibility of etching using an oxalic-acid etchant was evaluated. The evaluation content is the same as in Example 2. Table 3 shows the evaluation results.
[0148] [table 3]
[0149]
[0150]In the case of using an aqueous oxalic acid solution as an etching solution, it was confirmed that in No. 92 in which a crystalline ITO film was formed as a transparent conductive oxide film, compared with No. 91 in which an amorphous ITO film was formed, the Aqueous oxalic acid has poor etchability. In addition, when a mixed solution of an aqueous oxalic acid solution and nitric acid was used as an etching solution, even in No. 93 in which a crystalline ITO film was ...
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Abstract
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