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Forming method of memory device

A technology for memory devices and memory cell circuits, which is applied to electric solid state devices, semiconductor devices, electrical components, etc., can solve problems such as poor performance of memory devices, and achieve the effects of improving stability, uniformity, and consistency.

Active Publication Date: 2017-06-20
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, the performance of storage devices composed of 3D NAND flash memory cells is poor

Method used

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  • Forming method of memory device

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Experimental program
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Embodiment Construction

[0028] As described in the background art, memory devices formed by the prior art have poor performance.

[0029] A method of forming a memory device, please refer to figure 1 , including: providing a bottom substrate 100 with a control circuit 110 on the bottom substrate 100; forming a top substrate 120 on the control circuit 110, with conductive ions in the top substrate 120; forming a memory cell circuit on the top substrate 120 130 , the storage unit circuit 130 is electrically connected to the control circuit 110 .

[0030] The top substrate 120 includes a first substrate located on the control circuit 110 and a second substrate located on the first substrate, and the concentration of conductive ions in the first substrate is greater than the concentration of conductive ions in the second substrate. The method of forming the top layer substrate 120 includes: providing an initial top layer substrate including a first region and a second region located on the first region;...

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Abstract

The invention provides a forming method of a memory device. The method comprises the steps as follows: an underlying substrate is provided and the underlying substrate is provided with a control circuit; a top-layer substrate is formed on the control circuit, conductive ions are doped into the top-layer substrate by adopting an in-situ doping process in the process of forming the top-layer substrate, the top-layer substrate has a preset optimization thickness and comprises a first substrate and a second substrate located on the first substrate and the concentration of the conductive ions in the first substrate is greater than that in the second substrate; and a memory cell circuit is formed on the top-layer substrate and is electrically connected with the control circuit. According to the method, the performance of the memory device is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for forming a memory device. Background technique [0002] Flash memory is also known as flash memory. The main feature of flash memory is that it can maintain stored information for a long time without power, and has the advantages of high integration, fast access speed, and easy erasing and rewriting. , so it has become the mainstream memory of non-volatile memory. According to different structures, flash memory is divided into NOR Flash Memory and NAND Flash Memory. Compared with NOR Flash Memory, NAND Flash Memory can provide high cell density, can achieve high storage density, and write and erase faster. [0003] With the development of planar flash memory, tremendous progress has been made in the production process of semiconductors. However, the current development of planar flash memory has encountered various challenges: physical limits, suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11524H01L27/1157H10B41/35H10B41/40H10B43/20H10B41/27H10B43/23H10B43/27H10B43/35H10B43/40
CPCH10B43/20H01L29/40117H10B43/35H10B43/50H10B43/27H01L29/66833H01L29/792
Inventor 华文宇夏志良蒋阳波刘藩东洪培真傅丰华杨要华曾明霍宗亮
Owner YANGTZE MEMORY TECH CO LTD
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