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A method for etching a silicon substrate by a Bosch process

A technology of silicon substrate and process, applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problem of reducing the stability and controllability of the MFC process, the unsatisfactory MFC response curve, and reducing the process stability of the process chamber, etc. problem, to achieve the effect of reducing scallop defects, shortening the process time step, ensuring stability and controllability

Active Publication Date: 2019-08-20
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology

[0003] The industry reduces the generation of scallop by reducing the time step of the deposition step and the etching step. However, in the current bosch process, the time step of the deposition step and the etching step has been shortened to the order of milliseconds (ms). There are also relatively high requirements for each component in the process chamber; especially for the mass flow controller (MFC), because the response speed of the MFC is an important parameter in the design of the bosch process chamber; However, since the MFC controls the gas flow through the valve, in the actual process that needs to switch the MFC quickly, the MFC often has a time delay, resulting in an unsatisfactory MFC response curve.
In order to reduce the response delay of the MFC, it is necessary to adjust the response speed of the MFC to the highest limit, which will reduce the process stability and controllability of the MFC, thereby reducing the process stability of the entire process chamber

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  • A method for etching a silicon substrate by a Bosch process
  • A method for etching a silicon substrate by a Bosch process

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Embodiment Construction

[0025] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0026] The method of the present invention is carried out in a plasma etching reaction chamber. In the plasma etching process for the silicon substrate in the reaction chamber, in order to reduce the scallop generated when the etching step and the deposition step are alternated, it is necessary to Try to set the process time of each etching step and deposition step as short as possible. The method is to quickly control the etching gas and deposition gas alternately entering the etching reaction chamber through MFC and control the process parameters of each step. Th...

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Abstract

The invention provides a method for etching a silicon substrate in a BOSCH process. For a deposition step and an etch step, two groups of gas enter a process chamber alternately. Under the premise that there is no need to adjust the response speed of an MFC (Mass Flow Controller), the corresponding process time step sizes of the deposition step and the etch step can be shortened. Namely, the process time step sizes are shortened cleverly by delaying the response time of the MFC. The delay in response time of the MFC does not affect the process stability, but rather ensures the stability and controllability of the MFC. The process stability is improved. The scallop defect is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for etching a silicon substrate by a Bosch process. Background technique [0002] In the Bosch process, the deposition step (deposition step) and the etching step (etch step) will switch each other, and the switching between the deposition step and the etching step will inevitably produce wrinkles (scallop). As the feature size becomes smaller, the requirements for scallop become more and more stringent. [0003] The industry reduces the generation of scallop by reducing the time step of the deposition step and the etching step. However, in the current bosch process, the time step of the deposition step and the etching step has been shortened to the order of milliseconds (ms). There are also relatively high requirements for each component in the process chamber; especially for the mass flow controller (MFC), because the response speed of the MFC is an important p...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065
Inventor 王洪青黄智林
Owner ADVANCED MICRO FAB EQUIP INC CHINA