A method for etching a silicon substrate by a Bosch process
A technology of silicon substrate and process, applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problem of reducing the stability and controllability of the MFC process, the unsatisfactory MFC response curve, and reducing the process stability of the process chamber, etc. problem, to achieve the effect of reducing scallop defects, shortening the process time step, ensuring stability and controllability
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[0025] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0026] The method of the present invention is carried out in a plasma etching reaction chamber. In the plasma etching process for the silicon substrate in the reaction chamber, in order to reduce the scallop generated when the etching step and the deposition step are alternated, it is necessary to Try to set the process time of each etching step and deposition step as short as possible. The method is to quickly control the etching gas and deposition gas alternately entering the etching reaction chamber through MFC and control the process parameters of each step. Th...
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