Unlock instant, AI-driven research and patent intelligence for your innovation.

A method to improve the reliability and speed of eeprom reading and writing

A reliable and high-speed technology, applied in the input/output process of data processing, instruments, input/output to record carriers, etc., can solve the problems of lost data, data flexibility limitations, etc., to prevent electrostatic interference, improve reading and writing The effect of reliability and speed

Active Publication Date: 2020-02-18
SICHUAN CHANGHONG ELECTRIC CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it can avoid EEPROM data loss due to interference and power failure, the data flexibility is limited
Option 2: Use the method of random reading and writing EEPROM, flexible operation, but there is a risk of data loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method to improve the reliability and speed of eeprom reading and writing
  • A method to improve the reliability and speed of eeprom reading and writing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The invention classifies the data that needs to be stored in the EEPROM and partitions the EEPROM memory. Classified storage, each type of data has its own verification and has both a storage area and a backup area. In data storage or reading and writing, the important data is stored first, and then the secondary data is stored. And first store the data in the storage area, and after confirming that the storage is correct, store the data in the backup area.

[0031] EEPROM mainly has two read and write modes: the first read and write operation after EEPROM is powered on, and the normal read and write operation after EEPROM is powered on.

[0032] 1. The first read and write operation after EEPROM is powered on.

[0033] First read the important system data in the EEPROM storage area. If the EEPROM reads the data correctly, use the page write method to directly store the important system data in the EEPROM storage area into the EEPROM backup area, and ensure that the data wri...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of an EEPROM (Electrically Erasable Programmable Read-Only Memory) read-write method, and discloses a method for improving read-write reliability and rate of the EEPROM so as to improve the read-write reliability and rate of the EEPROM. The method comprises the following steps that: classifying data which needs to be stored into the EEPROM, and carrying out partitioning on the EEPROM memory; carrying out classification and partitioning storage, wherein each class of data owns respective checkout and is simultaneously provided with a storage area and a backup area; when the data is stored or read and written, firstly storing important data, and then, storing subordinate data; and storing the data into the storage area, and storing the data into the backup area after errorless storage is determined. The method is suitable for home appliances capable of carrying out EEPROM read-write.

Description

Technical field [0001] The invention relates to the field of EEPROM reading and writing methods, in particular to a method for improving the reliability and speed of EEPROM reading and writing. Background technique [0002] Currently, there are two major technical solutions for EEPROM operations applied in the home appliance industry. Solution 1: Adopt pre-storage method, read only and not write during later operation. Scheme 2: EEPROM reads and writes EEPROM randomly according to requirements during the operation of the whole machine. Solution 1: Adopt pre-storage method, read only and not write during operation. Although it can avoid EEPROM data loss due to interference and power failure, data flexibility is limited. Scheme 2: Using random read and write EEPROM method, flexible operation, but there is a risk of data loss. In order to improve the reliability and speed of reading and writing EEPROM, the present invention performs related optimizations on the basis of the seco...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06
CPCG06F3/0614G06F3/0622G06F3/0679
Inventor 王映娟赵寰操四胜严刚刘运中
Owner SICHUAN CHANGHONG ELECTRIC CO LTD