Target assembly
A technology of target components and insulating plates, which is applied in the field of target components, can solve the problems of difficult removal of insulating material films and inconvenient reuse of backplanes, and achieve the effects of easy reuse and suppression of abnormal discharge
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2017-08-01
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Abstract
Description
technical field
[0001] The present invention relates to a target assembly assembled on a sputtering device, in particular to a back plate having an insulating material target and a back plate bonded to one side of the target by an adhesive material, the back plate has a The outer extension extends the target assembly. Background technique
[0002] For example, in the manufacturing process of NAND flash memory and MRAM (magnetoresistive memory), a process of forming an insulating film such as an aluminum oxide film or a magnesium oxide film is performed, and a sputtering device is used for mass production of the insulating film. In such a sputtering device, a target assembly detachably assembled in a vacuum chamber that can be evacuated is composed of a target that is appropriately selected according to the composition of the thin film to be formed and a cooling device for cooling when sputtering the target to form a film. The back panel is integrally formed.
[0003] Such ...
Examples
Embodiment Construction
[0023] Hereinafter, referring to the drawings, a target assembly according to an embodiment of the present invention will be described by taking a product mounted on a sputtering apparatus as an example. Below to figure 1 As a reference, the inside top side of the vacuum chamber 1 is described as "upper" and the bottom side thereof as "lower".
[0024] Such as figure 1 As shown, the sputtering apparatus SM has a vacuum chamber 1 defining a process chamber 1a. The bottom of the vacuum chamber 1 is connected to a vacuum pump P made of a turbomolecular pump or a rotary pump through an exhaust pipe, and can be evacuated to a specified pressure (for example, 10 -5 Pa). A gas pipe 12 connected to a gas source not shown in the figure and having a mass flow controller 11 inserted therein is connected to the side wall of the vacuum chamber 1, and a sputtering gas composed of a rare gas such as Ar can be introduced into the processing chamber 1a at a predetermined flow rate. .
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