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Semiconductor device structure

A semiconductor and component technology, applied in the field of semiconductor component structure, can solve problems such as difficult implementation of manufacturing process

Inactive Publication Date: 2017-08-15
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, processes continue to become more difficult to implement
The challenge of forming interconnect structures with increasingly smaller pitches in semiconductor devices

Method used

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  • Semiconductor device structure
  • Semiconductor device structure
  • Semiconductor device structure

Examples

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Embodiment Construction

[0040] The following disclosure provides many different embodiments, or examples, for implementing different features of the present invention. However, the following disclosure of the present disclosure describes specific examples of each component and its arrangement in order to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the following content of the present disclosure describes that a first feature is formed on or above a second feature, it means that it includes an embodiment in which the formed first feature and the second feature are in direct contact, Embodiments in which additional features can be formed between the above-mentioned first feature and the above-mentioned second feature, so that the above-mentioned first feature and the above-mentioned second feature may not be in direct contact are also included. Furthermore, the following description mentions that the first process is performed before th...

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Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a dielectric layer over the semiconductor substrate. The semiconductor device structure also includes a conductive feature in the dielectric layer, and the conductive feature includes a catalyst layer and a conductive element. The catalyst layer is between the conductive element and the dielectric layer, and the catalyst layer is in physical contact with the conductive element. The catalyst layer continuously surrounds a sidewall and a bottom of the conductive element. The catalyst layer is made of a material different from that of the conductive element, and the catalyst layer is capable of lowering a formation temperature of the conductive element.

Description

technical field [0001] The present disclosure relates to semiconductor device structures and methods of forming the same, and more particularly to interconnect structures of semiconductor device structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has gone through a stage of rapid development. Technological advances in integrated circuit materials and design have produced many generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation of integrated circuits. In the course of integrated circuit development, functional density (that is, the number of interconnected components per chip area) has generally increased, while geometric size (that is, the smallest component or circuit that can be created in a process) has declined. . This process of miniaturization generally provides many benefits by increasing production efficiency and reducing associated co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/538
CPCH01L23/5386H01L21/76847H01L23/53276H01L21/76844H01L21/76876H01L21/76877H01L21/76804H01L21/76843H01L21/76879H01L23/3736H01L23/5226H01L23/528H01L23/53204
Inventor 李明翰眭晓林
Owner TAIWAN SEMICON MFG CO LTD
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