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MEMS structure and manufacturing method thereof

A technology for substrates and carrier substrates, applied in microelectronic microstructure devices, microstructure technology, microstructure devices, etc., can solve problems such as complex devices and semiconductor devices, decreased output, and increased manufacturing complexity

Inactive Publication Date: 2017-08-18
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The manufacture of MEMS devices and semiconductor devices on a miniaturized scale has become more complex, and the increase in manufacturing complexity may cause defects such as yield reduction, wafer cracking, and other problems

Method used

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  • MEMS structure and manufacturing method thereof
  • MEMS structure and manufacturing method thereof
  • MEMS structure and manufacturing method thereof

Examples

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Embodiment Construction

[0043] The present invention provides several different implementation methods or embodiments, which can be used to realize different features of the present invention. For simplicity of illustration, examples of specific components and arrangements are also described herein. It should be noted that these specific examples are provided for the purpose of illustration only, not limitation. For example, the following description of how a first feature is on or over a second feature may include embodiments where the first feature is in direct contact with the second feature, and the description may also include other differences. An embodiment wherein there is another feature between the first feature and the second feature such that the first feature is not in direct contact with the second feature. In addition, various examples in the present invention may use repeated reference numerals and / or text notations to make the document more simple and clear, and these repeated refer...

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PUM

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Abstract

A structure and a fabrication method thereof are provided. The method includes the following operations. A device substrate having a first surface and a second surface opposite to each other is received. A carrier substrate having a third surface and a fourth surface opposite to each other is received. An intermediate layer is formed between the third surface of the carrier substrate and the second surface of the device substrate. The second surface of the device substrate is attached to the third surface of the carrier substrate. The device substrate is thinned from the first surface. A device is formed over the first surface of the device substrate. The carrier substrate and the device substrate are patterned from the fourth surface to form a cavity in the carrier substrate, the intermediate layer and the device substrate.

Description

technical field [0001] The present invention relates to microelectromechanical systems (MEMS) structures and methods of fabrication thereof. Background technique [0002] Microelectromechanical systems (MEMS) devices are microscale devices, typically ranging in size from less than 1 micron to several millimeters. MEMS devices contain mechanical elements (fixed and / or movable) formed on a substrate (e.g., a wafer) to sense physical conditions, such as force, acceleration, pressure, temperature, or vibration, and electronic elements to process electrical signals . MEMS devices are widely used in applications such as acoustic systems, automotive systems, inertial guidance systems, household appliances, protection systems for many devices, and in many other in industrial, scientific, and engineering systems. [0003] With the development of technology, the design of MEMS devices and semiconductor devices becomes more and more complicated due to the smaller size and thickness....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00H01B7/02
CPCB81B7/02B81C1/00015B81C1/00873H04R19/04B81B2201/0257B81B2207/015B81C2201/014B81C1/00182B81C2201/056H04R19/005H04R31/00B81B3/0021B81B2203/0127B81C1/00158B81C1/00825
Inventor 朱家骅郑钧文
Owner TAIWAN SEMICON MFG CO LTD