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A graphite disc base

A graphite disk and base technology, applied in the field of optoelectronics, can solve the problem of uneven thickness of epitaxial wafers, and achieve the effects of slowing down uneven thickness, easy diffusion, and avoiding aggregation

Active Publication Date: 2019-07-02
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of uneven thickness of the epitaxial sheet grown from the pocket at the center of the existing graphite disk base, an embodiment of the present invention provides a graphite disk base

Method used

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  • A graphite disc base
  • A graphite disc base
  • A graphite disc base

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0021] figure 1 It is a schematic structural diagram of a graphite disc base provided by an embodiment of the present invention, as shown in figure 1 As shown, the graphite disc base includes a base body 10 and a plurality of pockets 20 for growing epitaxial sheets, the pockets 20 include a first pocket 21 and a plurality of second pockets 22, and the first pocket 21 is arranged on the base body At the central position of the base body 10 , a plurality of second pockets 22 are circumferentially distributed around the central position of the base body 10 .

[0022] The first pocket 21 and the second pocket 22 are circular pits distributed on the base body 10. In this embodiment, the base body 10 is provided with two circles of second p...

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Abstract

The invention discloses a graphite plate base, and belongs to the technical field of photoelectrons. The graphite plate base comprises a base body and multiple pockets for growing epitaxial wafers, wherein the pockets comprise a first pocket and multiple second pockets; the first pocket is arranged at the center position of the base body; the second pockets are circumferentially distributed around the center position of the base body; the depth of the first pocket is greater than that of each second pocket; the first pocket is provided with a bottom surface and an annular side wall; and the bottom surface of the first pocket comprises an annular plane connected with the annular side wall of the first pocket and a curved surface located on the bottom surface of the first pocket. By enabling the depth of the first pocket to be greater than that of each second pocket, in an epitaxial wafer growing process, a distance between the epitaxial wafer in the first pocket and a hole, which is used for conveying a raw material, in a cover plate is increased, so that the raw material can be dispersed in the graphite plate base more easily, aggregation of the raw material is avoided, and the problem of non-uniform thickness of the epitaxial wafer growing in the first pocket can be relieved.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a graphite disc base. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens , signal lights, backlight, toys and other fields. [0003] In the LED manufacturing process, the most important thing is to grow epitaxial wafers. Epitaxial wafers are usually grown in the graphite disk base of the Metal Organic Chemical Vapor Deposition (English: MetaOrganic Chemical Vapor Deposition, referred to as: MOCVD) equipment. A plurality of circular pockets are arranged circumferentially, and epitaxial wafers are grown in each pocket. During the growth process, a larger cover plate is sealed on the base of the graphite di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C30B25/12H01L21/687
CPCC23C16/4581C30B25/12H01L21/68771
Inventor 胡任浩胡加辉李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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