Method for preparing nanocrystalline graphene on sapphire substrate

Abstract

The invention discloses a method for preparing nanocrystalline graphene on a sapphire substrate and belongs to the field of semiconductor material preparation. The method comprises the following steps of putting a sapphire substrate into a graphene PECVD plasma device, pumping vacuum and filling an inert gas to target pressure; heating the sapphire substrate to a target temperature; pretreating the sapphire substrate in hydrogen atmosphere; setting source power of PECVD plasma to be target powder, setting chamber pressure to be target pressure, setting hydrogen gas flow to target flow, turning on a PECVD plasma power supply to form plasma; introducing a carbon source, setting the carbon source flow to be target flow, setting the growth time and growing the graphene; and closing the carbon source, closing the PECVD plasma, completing growth and cooling to room temperature. The graphene material prepared through the method does not need to be transferred, the preparation cost of wafer-level graphene is reduced and the method is of important significance in graphene foundation research and device research.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a method for preparing nanocrystalline graphene on a sapphire substrate. Background technique [0002] Graphene, a two-dimensional crystal structure material, has outstanding physical, mechanical, chemical and electrical properties, and has important potential applications in high-frequency electronic devices, optoelectronic devices, and high-sensitivity sensors. [0003] The controllable preparation of large-scale graphene materials is a prerequisite for the realization of graphene applications. At present, the preparation methods of wafer-level graphene materials are mainly based on silicon carbide high-temperature sublimation method and metal substrate chemical vapor deposition method. Among them, the advantage of the former is that the silicon carbide substrate is insulating, and the material does not need to be transferred, but it is limited by the size and...

AI Technical Summary

Problems solved by technology

Among them, the advantage of the former is that the silicon carbide substrate is insulating, and the material does not need to be transferred, but it is limited by the size and price of the silicon carbide substrate, which is not conducive to the promotion and research of graphene; the advantage of the latter is that the cost is low, but graphene needs to be Materials are transferred from metal substrates to other substrates. The transfer process inevitably introduces impurities and lattice defects, etc., which increases the complexity of the process.