Current mode rm or non-exclusive or unit circuit based on finfet device

Abstract

The invention discloses a current-mode RM NOR-XOR unit based on a FinFET device. The current-mode RM NOR-XOR unit comprises the first P-type FinFET tube, the second P-type FinFET tube, the first N-type FinFET tube, the second N-type FinFET tube, the third N-type FinFET tube, the fourth N-type FinFET tube, the fifth N-type FinFET tube and the sixth N-type FinFET tube, wherein the first P-type FinFET tube and the second P-type FinFET tube are respectively the low-threshold P-type FinFET tube; the first N-type FinFET tube, the third N-type FinFET tube and the fourth N-type FinFET tube are respectively the high-threshold N-type FinFET tube; the second N-type FinFET tube, the fifth N-type FinFET tube and the sixth N-type FinFET tube are respectively the low-threshold N-type FinFET tube. The current-mode RM NOR-XOR unit disclosed by the invention has the advantage that the circuit area, the time delay, the power consumption and the power delay product are small on the basis of the correct logic function.

Description

technical field [0001] The invention relates to an OR non-exclusive OR unit circuit, in particular to a current mode RM or non-exclusive OR unit circuit based on a FinFET device. Background technique [0002] The basic gate circuit is the most basic logic unit in the digital circuit, and the XOR and XOR gate circuits are an indispensable part of the basic logic circuit. Current-mode logic circuits have the characteristics of high operating frequency, low power consumption, and strong anti-interference ability. However, traditional CMOS current-mode logic still faces the problems of large number of transistors, high power consumption, and complex design. With the continuous advancement of VLSI technology, the operating speed and power consumption requirements of digital systems continue to increase, and the performance requirements for basic logic units are also more stringent, requiring that basic logic units should have lower power consumption and smaller delay. [0003] W...

AI Technical Summary

Problems solved by technology

The RM logic does not avoid the series connection of CMOS transistors in the pull-down network, resulting in a three-layer logic. The series connection of CMOS transistors leads to a too long stack height from the power supply to the ground. In order to make the circuit work normally, it is necessary to increase the working power of the circuit accordingly. The consumption will increase accordingly, and the number of transistors used in the circuit will be larger, resulting in larger circuit area, delay and power consumption delay product.

Images