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Electrostatic discharge protection device, memory element and electrostatic discharge protection method

An electrostatic discharge protection and electrostatic discharge technology, applied in the field of electrostatic discharge protection devices, to achieve the effect of enhancing consistency and solving the burnout of electrostatic discharge protection devices

Active Publication Date: 2017-10-24
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The first gate structure is located above the doped well region

Method used

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  • Electrostatic discharge protection device, memory element and electrostatic discharge protection method
  • Electrostatic discharge protection device, memory element and electrostatic discharge protection method
  • Electrostatic discharge protection device, memory element and electrostatic discharge protection method

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Embodiment Construction

[0042] The present invention provides an electrostatic discharge protection device and its application, which can solve the problem that the metal-oxide-semiconductor finger structure in the known electrostatic discharge protection device is not easy to be opened uniformly and cause burning. In order to make the above-mentioned embodiments and other objects, features and advantages of the present invention more comprehensible, several electrostatic discharge protection devices and their application methods and components are cited below as preferred embodiments and described in detail with the accompanying drawings.

[0043] However, it must be noted that these specific implementation cases and methods are not intended to limit the present invention. The invention can still be implemented with other features, elements, methods and parameters. The proposal of the preferred embodiment is only used to illustrate the technical features of the present invention, and is not intended...

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Abstract

The invention discloses an electrostatic discharge protection device, a memory element and an electrostatic discharge protection method. The electrostatic discharge protection device comprises a semiconductor substrate, a first gate structure, a first doped region, a second doped region, and a third doped region. The semiconductor substrate includes a doped well region having a first electrical property; and one end of the semiconductor substrate is grounded. The first gate structure is arranged on the doped well region. The first doped region having a second electrical property is arranged in the doped well region and is adjacent to the first gate structure and electrically connected to a welding pad. The second doped region having the second electrical property is arranged in the doped well region and is adjacent to the first gate structure. The third doped region having the first electrical property is arranged in the doped well region; and the third doped region and the second doped region form a P / N junction. The second doped region and the third doped region have doping concentrations higher than that of the doped well region.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit and its application. In particular, it relates to an electrostatic discharge (ESD) protection device, a memory element having the electrostatic discharge protection device, and an electrostatic discharge protection method. Background technique [0002] Electrostatic discharge is a phenomenon of accumulation and transfer of electrostatic charge between different objects. In a very short time, usually only a few nanoseconds, a very high-energy, high-density current is generated, and once it flows through a semiconductor device, it usually damages the semiconductor device. Therefore, when an electrostatic charge is generated in a semiconductor device by machinery or human body, an electrostatic discharge protection device and a discharge path must be provided to prevent the semiconductor device from being damaged. [0003] Taking the electrostatic discharge protection structure widely used betw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02
CPCH01L27/0251
Inventor 王世钰李明颖黄文聪
Owner MACRONIX INT CO LTD
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