Array substrate, preparation method of array substrate, and display panel

Abstract

The invention relates to the technical field of display, and discloses an array substrate, a preparation method of the array substrate, and a display panel. The array substrate comprises an underlayer substrate and a plurality of thin film transistor (TFT) switches, wherein each TFT switch comprises a light shielding block formed on the underlayer substrate, a buffer layer formed on one side, deviated from the underlayer substrate, of each light shielding block, a channel layer formed in a second groove, and a grid insulating layer, a grid electrode, an interlayer insulating layer, a source-drain electrode and a passivation layer formed on one side, deviated from the underlayer substrate, of each channel layer; first grooves with opening directions deviated from the underlayer substrate are formed in the light shielding blocks; and the second grooves are formed in the buffer layers corresponding to the first grooves. According to the array substrate, the light shielding blocks are prepared by non-metal materials, so that a double TFT effect can be avoided; and bulges on the two sides of the first grooves are utilized to shield light without a TFT switch region, so that the stability of the TFT switches can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display panel. Background technique [0002] Recently, Organic Light-Emitting Diode (OLED) has gradually become the mainstream of display panels due to its advantages of high contrast ratio and self-luminescence, and is favored by the public. [0003] However, in order to protect the stability of the channel layer in large-size OLEDs, a layer of metal pattern is formed under the top-gate TFT to avoid external light from interfering with its characteristics, but this will result in a double TFT effect. Moreover, since there is a buffer layer between the metal pattern and the channel layer, and the large-size OLED metal wiring is very dense, it cannot block the light reflected by other metal regions, resulting in instability of the thin film transistor. Contents of the invention [0004] The invention provides an array sub...

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Problems solved by technology

[0003] However, in order to protect the stability of the channel layer in large-size OLEDs, a layer of metal pattern will be formed under the top-gate thin-film transistor to avoid the interference of external light on its characteristics, but this will produce a double thin-film transistor effect.

Moreover, because there is a buffer layer between the metal pattern and the channel layer, and the large-size OLED metal wiring is very dense, it cannot block the light reflected by other metal regions, resulting in instability of the thin film transistor.

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