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A gallium nitride high electron mobility transistor and its preparation and use method

A high electron mobility, gallium nitride technology, applied in the field of compound semiconductor devices, can solve the problem of a single way of regulating the output current of the device, and achieve the effect of rich regulation means and flexible work

Active Publication Date: 2020-04-07
CHENGDU HIWAFER SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing technology only affects the channel carrier transport through the gate voltage, and the output current regulation mode of the device is single

Method used

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  • A gallium nitride high electron mobility transistor and its preparation and use method
  • A gallium nitride high electron mobility transistor and its preparation and use method
  • A gallium nitride high electron mobility transistor and its preparation and use method

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Embodiment Construction

[0024] Further describe the technical scheme of the present invention in detail below in conjunction with accompanying drawing:

[0025] In order to introduce a second variable to regulate the leakage current besides the gate voltage, a new GaN HEMT structure is designed in this embodiment: the device has two gates, and each gate is divided into a bus line and a branch line. The branch lines are arranged in an interdigitated shape and penetrate deep into the gallium nitride channel layer, and there is a SiN medium between the branch line metal and the epitaxial structure. The two adjacent gate branch lines belong to different gates, and form a typical planar capacitor structure with the SiN dielectric and epitaxial structure in between. Once there is a voltage difference between the two gates, it will generate in the direction perpendicular to the capacitor plate. The electric field induces the channel carriers to move in the opposite direction of the electric field, and the d...

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Abstract

The invention discloses a gallium nitride high-electron-mobility transistor and preparation and use methods thereof. The transistor includes a gallium nitride epitaxial structure, a source electrode, a drain electrode and two gate electrodes. The source electrode and the drain electrode are in ohmic connection with the gallium nitride epitaxial structure. The two gate electrodes are disposed between the source electrode and the drain electrode. Each gate electrode includes a bus and a plurality of branch lines connected with the bus. The buses are in Schottky contact with the gallium nitride epitaxial structure. The branch lines are wrapped in a medium, and extend into the channel layer of the gallium nitride epitaxial structure. The branch lines of the two gate electrodes are interdigited in arrangement. A factor, namely, gate voltage difference, is additionally introduced on the basis of channel carriers control with gate voltage only. Therefore, the gates can control the channel carriers in richer and more effective ways, and the device can work more flexibly.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor devices, and relates to a gallium nitride high electron mobility transistor and a preparation and use method thereof. Background technique [0002] The third-generation semiconductor gallium nitride has attracted more and more attention from academia and industry because of its high breakdown field strength, good radiation resistance, and high temperature resistance. At present, GaN high electron mobility transistor (HEMT) is regarded as the first choice for next-generation RF / microwave power amplifiers due to its unique high electron mobility, high two-dimensional electron gas surface density, high breakdown electric field, and high power output density. technology. [0003] GaN HEMT is a three-terminal device, which is divided into three electrodes: gate, source and drain. Driven by the drain voltage, carriers are transported from the source electrode to the drain electrode to f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/423H01L21/335
CPCH01L29/4232H01L29/66431H01L29/7785
Inventor 孔欣
Owner CHENGDU HIWAFER SEMICON CO LTD