Diamond-like carbon (DLC) thin film and preparation method thereof

A diamond film and type technology, which is applied in metal material coating process, ion implantation plating, gaseous chemical plating, etc., can solve difficult composition transition and structural transition, difficult bonding force, and can not improve the DLC layer. Problems such as adhesion to the substrate surface
CN107400873AActive Publication Date: 2017-11-28TRITREE METAL SHENZHEN
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TRITREE METAL SHENZHEN
Publication Date
2017-11-28

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Abstract

The invention discloses a preparation method of a diamond-like carbon (DLC) thin film and the DLC thin film prepared by using the preparation method. The method comprises the following steps: S3, preparing a metal carbide transition layer on a base material; S4, forming a metal W-doped DLC transition layer on the metal carbide transition layer by carrying out a plasma enhanced chemical vapor deposition (PECVD) process and a physical vapor deposition (PVD) process at the same time, wherein pulse bias voltage is controlled to gradually rise, and WC target current is controlled to gradually decrease, so that the metal W-doped DLC transition layer has a gradual transition from taking metal W as a main body to taking DLC as the main body from inside to outside; S5, adopting a PECVD method to form the DLC layer on the metal W-doped DLC transition layer. The preparation method improves the binding force between the DLC layer and the surface of the base material while reducing the production cost.
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Claims

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