Simple pressure applying type universal compression joint IGBT (insulated gate bipolar translator) clamp

Abstract

The invention discloses a simple pressure supplying type universal compression joint IGBT (insulated gate bipolar translator) clamp. The clamp comprises a top plate, a disc spring, a disc spring fixing column, an upper uniform pressing plate, a lower uniform pressing plate, a hydraulic device positioning plate, a hydraulic device and a bottom plate, wherein the disc spring is arranged between the top plate and the upper uniform pressing plate; the disc spring fixing column passes through centers of the top plate and the disc spring to fix the disc spring; a compression joint IGBT part is positioned between the upper uniform pressing plate and the lower uniform pressing plate; a first positioning structure for fixing the compression joint IGBT part is arranged on the upper surface of the lower uniform pressing plate; the lower surface of the lower uniform pressing plate is in contact with the upper end of the hydraulic device; a second positioning structure for fixing a part where the hydraulic device is in contact with the lower surface of the lower uniform pressing plate is arranged on the lower surface of the lower uniform pressing plate; the hydraulic device positioning plate is positioned between the lower uniform pressing plate and the bottom plate and is in contact with the hydraulic device, and the hydraulic device is fixed by the hydraulic device positioning plate; the bottom plate is positioned at the bottom part of the clamp, and the hydraulic device is arranged on the bottom plate. With the adoption of the clamp, manual control on pressure applying is facilitated, the cost is decreased, and the operation convenience is improved.

Description

technical field [0001] The invention relates to the field of insulated gate bipolar transistors, in particular to a universal crimping type IGBT fixture for easy pressure application. Background technique [0002] The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) combines the advantages of both MOSFET tube and BJT tube. It has the characteristics of high switching frequency, high power density, and low on-state voltage. It has become increasingly popular in power systems, transportation Transportation, military and aviation and other fields. And in order to further meet the power level requirements of actual working conditions, IGBT devices often use multiple IGBT chips (and multiple FRD chips) in the form of parallel modules to be used in actual projects. The traditional packaging of IGBT devices is mostly welded, and the internal chips of the module are connected in parallel through the bonding wires. However, the structure itself has a large...

AI Technical Summary

Problems solved by technology

[0004] In the working conditions of power electronic equipment such as converter valves and DC circuit breakers, crimp-type IGBT devices are often pressed in series in a fixed fixture in the form of stacks, and this kind of clamp is generally large in size and must be fixed in the corresponding position. Inconvenient to replace components, inconvenient to use

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