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Finfet structures and methods of forming the same

A technology of isolation region and dummy gate, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc.

Active Publication Date: 2017-12-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as new device structures and even FinFETs continue to shrink, new challenges are found

Method used

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  • Finfet structures and methods of forming the same
  • Finfet structures and methods of forming the same
  • Finfet structures and methods of forming the same

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Embodiment Construction

[0010] The following disclosure provides a number of different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are only examples and are not intended to limit the invention. For example, in the following description, forming a first part over or on a second part may include embodiments where the first part and the second part are in direct contact, and may include additional parts formed between the first part and the second part , such that the first part and the second part are not in direct contact. Furthermore, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for simplicity and clarity and does not in itself indicate a relationship between the embodiments and / or configurations discussed.

[0011] In addition, for the convenience of description, spatial relatio...

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Abstract

An embodiment is a method including forming a first fin in a first region of a substrate and a second fin in a second region of the substrate, forming a first isolation region on the substrate, the first isolation region surrounding the first fin and the second fin, forming a first dummy gate over the first fin and a second dummy gate over the second fin, the first dummy gate and the second dummy gate having a same longitudinal axis, replacing the first dummy gate with a first replacement gate and the second dummy gate with a second replacement gate, forming a first recess between the first replacement gate and the second replacement gate, and a filling an insulating material in the first recess to form a second isolation region.

Description

technical field [0001] Embodiments of the present invention relate to a FinFET structure and a method for forming the same. Background technique [0002] Semiconductor devices are widely used in a large number of electronic devices such as computers, cell phones, and the like. Semiconductor devices include integrated circuits formed on semiconductor wafers by depositing various types of thin films of material over the semiconductor wafer and patterning the thin films of material to form the integrated circuits. Integrated circuits include field effect transistors (FETs), such as metal oxide semiconductor (MOS) transistors. [0003] One goal of the semiconductor industry is to continually shrink the size of individual FETs while increasing the speed of individual FETs. To achieve these goals, fin field effect transistors (FinFETs) or multi-gate transistors are being researched and implemented. However, with new device structures and even the continued scaling of FinFETs, n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/06H01L29/10H01L29/423H01L29/78
CPCH01L29/0649H01L29/1033H01L29/42356H01L29/66795H01L29/785H01L21/823431H01L21/823437H01L21/823481H01L21/823821H01L21/823828H01L21/823878H01L29/165H01L29/66545
Inventor 林志翰林志忠李俊鸿
Owner TAIWAN SEMICON MFG CO LTD