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Apparatus for subjecting a substrate surface to a continuous surface reaction

A substrate and precursor technology, applied in coating, gaseous chemical plating, metal material coating process, etc.

Active Publication Date: 2019-06-14
青岛四方思锐智能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In general, evacuation is one of the biggest disadvantages when the surfaces of the reaction chamber have to be cleaned or when the mask has to be cleaned or replaced with a new mask, and when this affects the entire assembly, it is Combining device tools can be very challenging

Method used

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  • Apparatus for subjecting a substrate surface to a continuous surface reaction
  • Apparatus for subjecting a substrate surface to a continuous surface reaction
  • Apparatus for subjecting a substrate surface to a continuous surface reaction

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Embodiment Construction

[0023] figure 1 An apparatus according to the invention is shown comprising a gas manifold 2 for supplying precursor material to the surface of a substrate 1 . The gas manifold 2 comprises an output face 3 , at least one precursor supply channel 4 for supplying precursors to the surface of the substrate 1 and at least one exhaust channel 5 for exhausting precursors from the surface of the substrate 1 . The precursors are supplied and discharged through the output face 3 . The device also comprises a substrate holder 6 for moving said substrate 1 in vertical direction. The substrate holder 6 is movable in the vertical direction for moving the substrate 1 between the process position and the loading position. The process position is the position of the substrate 1 during substrate coating, ie when the precursors are supplied on the surface of the substrate 1 . This means that in the process position the surface of the substrate 1 is in fluid connection with the output face 3 ...

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Abstract

The invention relates to an apparatus for subjecting a surface of a substrate to successive surface reactions. The apparatus comprises a gas manifold comprising (2) at least one precursor feeding channel (4) and at least one discharge channel. Part of the gas manifold forms a fixed part (2a). There is at least one removable part between the fixed part (2a) of the gas manifold (2) and the substrate holder (6). The gas manifold (2) further comprises a gas distributor (8) for supplying precursor to the surface of the substrate (1) and for discharging precursor from the surface of the substrate. The gas distributor (8) is arranged as a removable part.

Description

technical field [0001] The invention relates to a device according to the preamble of claim 1, and more particularly to a device for subjecting a substrate surface to a continuous surface reaction of at least a first precursor and a second precursor. The apparatus also includes a gas manifold including at least one precursor supply channel for supplying the precursor to the substrate surface and at least one exhaust channel for exhausting the precursor from the substrate surface. A part of the gas manifold forms the stationary part. The apparatus also includes a substrate holder for holding said substrate, and the substrate holder is movable in a vertical direction for moving the substrate between a process position and a loading position. Background technique [0002] Atomic layer deposition (ALD) is usually performed in a reaction chamber under vacuum conditions. Firstly, one or more substrates are loaded into the reaction chamber, then the reaction chamber is evacuated,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/44C23C16/04H01L21/02
CPCC23C16/45544C23C16/042C23C16/4401C23C16/45502C23C16/45563C23C16/4583
Inventor 佩卡·索伊尼宁
Owner 青岛四方思锐智能技术有限公司
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