Acidic copper plating solution, acidic copper plated product, and method for producing semiconductor device

Abstract

This acidic copper plating solution comprises a first additive made of a cationic polymer, at least one type of second additive selected from the group consisting of 2-mercapto-5-benzimidazole sulfonic acid, sodium 2-mercapto-5-benzimidazole sulfonate dihydrate, ethylene thiourea, and a partial 2-mercapto-5-benzimidazole sulfonate salt of poly(diallyldimethylammonium chloride), and a third additive made of a sulfur atom-containing organic compound, the acidic copper plating solution having a copper concentration of from 10 to 60 g / L, having a sulfuric acid concentration of from 10 to 200 g / L,including less than or equal to 90 mg / L chloride ions, and being capable of producing an acidic copper plated product having low thermal expansivity.

Description

technical field [0001] The invention relates to an acidic copper plating solution, an acidic copper plating object and a manufacturing method of a semiconductor device. Background technique [0002] As one of technologies exceeding the limit of miniaturization of LSI chips, a three-dimensional mounting technology in which a plurality of LSI chips are stacked to form a single package (Package) is being studied. In the three-dimensional mounting technology, an upper transistor is connected to a lower transistor through a through-silicon via (ThroughSilicon Via: through-silicon via) (hereinafter referred to as “TSV”). The Via-middle process, which is one of the TSV manufacturing processes, is a process for forming the TSV before the wiring process. In the mesohole process, a non-through hole is formed on a silicon substrate on which a transistor is formed, and the non-through hole is filled with copper by electroplating using an acidic copper plating solution. Furthermore, th...

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Problems solved by technology

[0003] However, in the mesopore process, when forming the oxide film for insulation, heating is performed at 400 to 600°C, but the linear expansion coefficient of copper is larger than that of silicon, so there is a problem that the copper of the TSV expands (hereinafter referred to as pumping ( Pumping)) to disconnect the upper wiring layer, thereby causing problems (for example, non-patent documents 1, 2, 3)

However, in this method, there is a problem of increased manufacturing cost due to the addition of a heating process and an expensive CMP process

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