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Wafer is centered in slot to improve azimuthal thickness uniformity at the edge of the wafer

A wafer, initial position technology, applied in coating, gaseous chemical plating, metal material coating process, etc., can solve problems such as uneven film thickness

Active Publication Date: 2021-08-27
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the wafer is not centered in the slot, the film thickness may not be uniform at the edge of the wafer

Method used

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  • Wafer is centered in slot to improve azimuthal thickness uniformity at the edge of the wafer
  • Wafer is centered in slot to improve azimuthal thickness uniformity at the edge of the wafer
  • Wafer is centered in slot to improve azimuthal thickness uniformity at the edge of the wafer

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Embodiment Construction

[0055] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the concepts presented. The concepts presented may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail so as not to unnecessarily obscure the concepts. While some concepts will be described in conjunction with specific embodiments, it should be understood that these embodiments are not intended to be limiting.

[0056] introduce

[0057] In this application, the terms "semiconductor substrate", "wafer", "substrate", "wafer substrate" and "partially fabricated integrated circuit" are used interchangeably. Those of ordinary skill in the art will appreciate that the term "partially fabricated integrated circuit" may refer to a silicon wafer during any of the many stages of integrated circuit fabrication thereon. Wafers or substrates used in the semiconductor dev...

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PUM

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Abstract

The present invention involves centering a wafer in a slot to improve azimuthal thickness uniformity at the edge of the wafer. A method for reducing wafer slip during film deposition includes evacuating a process chamber while the wafer is supported on lift pins or a carrier ring, and lowering the wafer to a support configured to minimize wafer slip during film deposition on the component. A multi-station processing chamber, such as a processing chamber for atomic layer deposition, may include a chuckless susceptor at each station with a wafer support configured to prevent movement of the wafer more than 400 microns off center . To minimize air cushions under the wafer, the wafer support can provide a gap of at least 2 mils between the backside of the wafer and the wafer-facing surface of the susceptor.

Description

technical field [0001] The present disclosure generally relates to a method of improving the uniformity of films deposited on a chuck-less wafer supported in a semiconductor processing tool. Certain aspects of the present disclosure relate to preventing wafer slippage during deposition of a film on a wafer. Background technique [0002] During deposition in the processing chamber, the film can be deposited on the front side of the wafer. For example, in atomic layer deposition (ALD), films can be deposited layer by layer by successive dosing and activation steps. In an ALD processing chamber, a precursor gas can be directed to a wafer, and the precursor gas can be chemisorbed onto the surface of the wafer to form a monolayer. Additional precursor gas may be introduced to react with the monolayer, followed by a purge gas to remove excess precursor and gaseous reaction by-products. The precursor gases can be alternately pulsed without overlapping, and the cycle can be repea...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/458C23C16/455
CPCC23C16/4581C23C16/45551C23C16/4583C23C16/4585C23C16/54H01L21/67748H01L21/68771H01L21/6875H01L21/68735H01L21/68742C23C16/45525H01L21/68H01L21/0228H01L21/67017H01L21/68721H01L21/67161H01L21/6719C23C16/50
Inventor 克洛伊·巴尔达赛罗尼艾德蒙·B·明歇尔弗兰克·L·帕斯夸里尚卡·斯瓦米纳森拉梅什·钱德拉赛卡兰
Owner LAM RES CORP