A method of crystal growth

A growth method and crystal technology, applied in the direction of crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of lower seeding quality, long time required, slow growth rate, etc., to shorten seeding time and improve Effect of Seed Quality

Active Publication Date: 2020-06-09
FUJIAN JING AN OPTOELECTRONICS CO LTD
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Problems solved by technology

[0002] In the traditional crystal seeding process, the crystals are pulled at fixed time intervals according to the size of the crystals. During the pulling process, the fluid disturbance is relatively severe, which affects the heat transfer at the growth interface and causes temperature fluctuations. Crystallization has adverse effects, making air bubbles unfavorable to discharge and reducing seeding quality
[0003] The traditional continuous seeding process, compared with the crystallization seeding process, has less fluid disturbance during the seeding process, which helps to better discharge air bubbles, but due to the slower growth rate, the time required is longer than the traditional crystallization seeding process Longer, it will inevitably waste machine utilization rate and manpower

Method used

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Embodiment

[0024] see figure 1 , the present invention provides a kind of crystal growth method, grow crystal in the crystal growth furnace, improve and integrate the original seeding process, the original inherent single seeding method (crystallization seeding or continuous seeding) integrated into the same novel seeding process, specifically, see figure 2 , including a first growth stage and a second growth stage in sequence, the first growth stage adopts a crystallization seeding process, and the second growth stage adopts a continuous seeding process.

[0025] see image 3 In the chart in the figure, the crystal diameter of the first growth stage ranges from 15 to 25mm, the first growth stage is at least composed of the first step of crystal seeding and the second step of crystal seeding, and the crystal diameter of the first step of crystal seeding The range is 15~20mm, the crystal amplification rate of the first step of crystallization seeding is 0.3~0.5mm / min, preferably 0.4mm / ...

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Abstract

A crystal growth method, which includes the design of the compound mode of crystallization seeding process and continuous seeding process in sequence, the transition stage between the two processes adopts continuous seeding process, and the crystal pulling seeding process and continuous seeding process are combined Crystals are integrated together to create a composite seeding process that meets the actual needs of production, and according to the actual use of the seeding process, it can increase the production capacity of a single machine, shorten the seeding cycle, and reduce production costs.

Description

technical field [0001] The invention relates to a crystal growth method, in particular to a crystal seeding process. Background technique [0002] In the traditional crystal seeding process, the crystals are pulled at fixed time intervals according to the size of the crystals. During the pulling process, the fluid disturbance is relatively severe, which affects the heat transfer at the growth interface and causes temperature fluctuations. Crystallization has an adverse effect, making air bubbles difficult to discharge and reducing seed quality. [0003] The traditional continuous seeding process, compared with the crystallization seeding process, has less fluid disturbance during the seeding process, which helps to better discharge air bubbles, but due to the slower growth rate, the time required is longer than the traditional crystallization seeding process If it is longer, it will inevitably waste the machine utilization rate and manpower. Contents of the invention [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/22
CPCC30B15/22C30B15/002C30B15/10C30B15/20C30B15/00
Inventor 刘乾坤齐凡吴锋波余剑云谢斌晖
Owner FUJIAN JING AN OPTOELECTRONICS CO LTD
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