Integrated force sensor
Patent Information
- Authority / Receiving Office
- CN Β· China
- Current Assignee / Owner
- FOSHAN SENSICFUSION TECH CO LTD
- Publication Date
- 2018-02-27
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Abstract
Description
technical field
[0001] The invention relates to the technical field of sensors, in particular to an integrated force sensor. Background technique
[0002] Existing force sensors measure force through piezoresistive sensitive elements (metal or silicon-doped devices). The measurement principle is: when the force is applied, it will cause the stress concentration of the silicon film, which will cause the resistance value change of the piezoresistive sensitive element, and the resistance value change can be converted into a voltage change through the Wheatstone bridge. These products are characterized by high sensitivity. However, there is a fatal problem: since the force is directly applied to the surface of the silicon film of the pressure sensor, when the overload pressure is applied to the silicon film, the film will easily be irreversibly damaged, and the damage mechanism includes plastic deformation. (such as metal) and fracture, etc. Therefore, the overload of traditi...