Semiconductor wafer bonding process

Abstract

The invention discloses a semiconductor wafer bonding process. The semiconductor wafer bonding process comprises the steps that (1) a first wafer and a second wafer are provided, and a solid isolatoris dispensed on the surface between the first wafer and the second wafer for isolating the wafers, wherein the first wafer and a second wafer need to be bonded; (2) a negative pressure environment isprovided; the first wafer and the second wafer are stacked; pressure is applied on the central area of the first wafer and the second wafer; and (3) wafer bonding is carried out on the first wafer andthe second wafer, and the bonded wafers is ground and thinned.

Description

technical field [0001] The invention relates to the technical field of semiconductor wafers, in particular to a semiconductor wafer bonding process. Background technique [0002] After half a century of rapid development, microelectronics technology and information technology based on microelectronics technology have had a revolutionary impact on the development of human society. However, the problems that must be faced today are: the physical limit of traditional transistors is constantly approaching, the manufacturing technology of smaller feature sizes is becoming more and more difficult, the power consumption of integrated circuits is increasing, and the investment in fabs is rising rapidly. Under such circumstances, how to maintain the continuous development of microelectronics technology at the speed described by Moore's Law has become a problem that the entire industry is struggling to solve today. [0003] The emergence of three-dimensional integrated circuits provi...

AI Technical Summary

Problems solved by technology

However, the problems that must be faced today are: the physical limit of traditional transistors is constantly approaching, the manufacturing technology of smaller feature sizes is becoming more and more difficult, the power consumption of integrated circuits is increasing, and the investment in fabs is rapidly rising

In the bonding process under the existing technical conditions, the problem of poor uniformity of the bonded wafer in the three-dimensional integrated circuit due to the distortion of the wafer has become a technical problem to be solved urgently by those skilled in the art