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Electronic systems with through-substrate interconnects and mems devices

A technology of electronic components and substrates, applied in the field of electronic systems with interconnection, can solve the problems of expensive manufacturing and not widely used

Active Publication Date: 2022-04-15
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, despite these benefits, it is not widely used in the field because it is currently too expensive to manufacture

Method used

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  • Electronic systems with through-substrate interconnects and mems devices
  • Electronic systems with through-substrate interconnects and mems devices
  • Electronic systems with through-substrate interconnects and mems devices

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Embodiment Construction

[0038] I. Overview

[0039] Embodiments of the invention reduce the cost and increase the strength of the resulting TSV structure. Embodiments use one or more solid sections to divide a single seam portion of an insulation structure into multiple segments to enhance the resulting strength of the TSV structure. Embodiments may also share process steps with the MEMS device fabrication process to further reduce costs, and may not require additional process steps for forming TSVs and MEMS devices in the same substrate.

[0040] The following detailed description explains embodiments consistent with the present disclosure with reference to the accompanying drawings. The embodiment(s) are described and references in the specification to "one embodiment," "an embodiment," "example embodiment," etc. indicate that the described embodiment(s) may include specific feature, structure or characteristic, but each embodiment may not necessarily include that particular feature, structure or...

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PUM

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Abstract

Systems, methods, and computer program products are disclosed for electronic systems having through-substrate interconnects and MEMS devices. An interconnect formed in a substrate having a first surface and a second surface, the interconnect comprising: a bulk region; a via extending from the first surface to the second surface; extending through the first surface into the substrate and defining a closed-loop insulating structure surrounding the via, wherein the insulating structure includes a seam portion separated by at least one solid portion; and an insulating region extending from the insulating structure toward the second surface connecting the via to the bulk region Separation, where the insulating structure and the insulating region together provide electrical isolation between the via and the bulk region.

Description

technical field [0001] The present invention relates generally to electronic systems, and more particularly to electronic systems with interconnects. Background technique [0002] Through-silicon vias (TSVs), also known as through-substrate vias, are interconnect structures formed in a substrate that provide vertical electrical connections completely through the substrate. [0003] There are various ways to classify TSV architectures. One classification is based on when the TSV fabrication process is performed in relation to the CMOS or MEMS device fabrication process. For example, in TSV-first architectures, the TSVs are formed entirely in the same substrate before the CMOS or MEMS devices are formed in the same substrate. In an intermediate TSV architecture, the TSVs are partially formed first and then completed after the CMOS or MEMS devices are formed or partially formed. [0004] Another classification is based on the conductive material used for through-substrate co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/00B81C1/00
CPCB81B7/007B81C1/00301B81B2207/096B81B7/0077H01L21/30604H01L21/76898H01L23/481B81C2201/013H01L23/5329
Inventor S·G·亚当C·W·布莱克墨
Owner ROHM CO LTD