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light sensing device

A light sensing and photodiode technology, applied in radiation control devices, diodes, semiconductor devices, etc., can solve the problems of slow electron movement rate and slow response speed

Active Publication Date: 2020-10-27
INNOLUX CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the manufacturing process of amorphous silicon, the arrangement of the molecular structure in the grain (Grain) has no order and direction, so the speed of electron movement is relatively slow, resulting in a relatively slow reaction speed.

Method used

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Embodiment Construction

[0040] Some embodiments of the present invention are exemplified below for the purpose of illustrating the spirit of the present invention rather than limiting the protection scope of the present invention. The protection scope of the present invention should be defined by the appended claims.

[0041] figure 1 It is a schematic diagram of the light sensing device 100 according to an embodiment of the present invention. Such as figure 1 As shown, the photo-sensing device 100 includes a substrate (not shown), a gate driving circuit 130, a data driving circuit 140, a plurality of gate lines (3 in the figure: GL1, GL2 and GL3), a plurality of Data lines (three are shown in the figure: DL1, DL2 and DL3) and a reference potential line (Bias Line) BL. A plurality of gate lines and a plurality of data lines are arranged alternately to define a plurality of pixel areas, and the figure shows 9 pixel areas 120-1, 120-2...120-9. exist figure 1 The photo-sensing device 100 shown in FI...

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Abstract

The invention discloses a light sensing device. The light sensing device is characterized by including a substrate, a first metal layer, a first dielectric layer, an active layer, a photodiode and a second metal layer. The first metal layer is located on the substrate. The first metal layer includes a gate line and a gate electrode. The gate electrode is electrically connected to the gate line. The first dielectric layer is located on the first metal layer. The active layer is insulated from the gate and at least partially overlaps the gate. The photodiode is located on the substrate. The second metal layer is located on the first dielectric layer. The second metal layer includes a data line and a reference potential line. The reference potential line is located above the photodiode.

Description

technical field [0001] The present invention relates to the technology of light-sensing devices, in particular to light-sensing devices combined with thin film transistors and photodiodes. Background technique [0002] Currently, in the manufacture of light sensing devices, amorphous silicon (a-Si) transistor elements are usually combined with photodiodes. However, in the manufacturing process of amorphous silicon, the arrangement of the molecular structure in the grain (Grain) is out of order and direction, so the speed of electron movement is relatively slow, resulting in a relatively slow reaction speed. [0003] Compared with the manufacturing process technology of amorphous silicon, the molecular structure of low-temperature polysilicon (LTPS) is orderly and directional, which makes the electron conduction speed relatively higher. In addition, compared with panels made of amorphous silicon, low-temperature polysilicon can increase the aperture ratio (aperture ratio), s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/146H01L27/14603H01L27/14643H01L27/14636H01L27/14692H01L31/03762H01L31/1055
Inventor 刘侑宗李淂裕
Owner INNOLUX CORP