Tray, reaction chamber and semiconductor processing equipment
A tray and body technology, applied in the field of semiconductor processing, can solve the problems that affect the production capacity of the machine, the position of the substrate S is prone to deviation, and the failure of the robot to transfer the film, etc.
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Embodiment 1
[0034] Please refer to Figure 4 to Figure 9 , in order to solve the above problems in the prior art, the present embodiment provides a tray 1, including a tray body 11, the tray body 11 is provided with a recess; the area around the recess on the upper surface 14 of the tray body is preset as the first bearing position; the first carrying position is used to carry the substrate S; the recess is used to accommodate the gas between the substrate S and the first carrying position when the substrate S is placed.
[0035] For details, please refer to Figure 5 , because the tray body 11 is formed with a recess, therefore, the upper surface 14 of the tray body must be higher than the bottom surface in the recess, when the size of the substrate S used is larger (such as 8inch), the bottom surface in the recess cannot bear the larger For the large-sized substrate S, at this time, the upper surface 14 of the tray body surrounding the recess can be used to carry the larger-sized subst...
Embodiment 2
[0058] This embodiment provides a reaction chamber, including the tray of Embodiment 1.
[0059] The reaction chamber of this embodiment includes the tray of Example 1, and the tray can gradually form an air film between the contact surface of the substrate S and the tray 1 when the substrate S is placed on the tray 1 from the manipulator, Due to the extrusion effect, the air in the air film will flow out to both sides, and the gas flowing out to the upper surface 14 of the tray body can be directly discharged into the atmosphere, and by keeping the contact area between the substrate S and the tray 1 at a certain In a smaller area, the gas that flows to the central area of the tray body 11 when the substrate S is placed is accommodated by the recess, so that this part of the gas can be smoothly discharged into the atmosphere.
Embodiment 3
[0061] This embodiment provides a semiconductor processing device, including the reaction chamber of Embodiment 2.
[0062] The semiconductor processing equipment of this embodiment includes the reaction chamber of Embodiment 2, wherein the tray can gradually form between the contact surface of the substrate S and the tray 1 when the substrate S is placed on the tray 1 from the manipulator. Air film, because the air in the air film will flow out to both sides due to the extrusion effect, the gas flowing out to the upper surface 14 of the tray body can be directly discharged into the atmosphere, and the contact area between the substrate S and the tray 1 can be directly discharged into the atmosphere. Keep it in a small area, and use the recess to accommodate the gas flowing to the central area of the tray body 11 when the substrate S is placed, so that this part of the gas can be smoothly discharged into the atmosphere.
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Abstract
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