A full-color stacked epitaxy micro-led array preparation method

Abstract

The present invention discloses a preparation method of a panchromatic stack-type epitaxial Micro-LED array, pertaining to the technical field of semiconductors. Stack-type red, blue and green three-color light-emitting units take three columns as a cycle, epitaxial structures of the light-emitting units perform stack-type epitaxy on the red, blue and green three-kind light-emitting units as the light-emitting units on a same conductive substrate from bottom to top, and then the red, blue and green three-kind light-emitting units are made by using a masking technology and a wet etching technology. According to a micro-isolation structure, a SiO2 or SiNx grid-shaped micro-isolation structure is prepared on the conductive substrate by using deposition, masking and etching technologies, and the conductive substrate is exposed from grid(s) as epitaxial windows of the light-emitting units.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a method for preparing a red, green, and blue full-color stacked epitaxial Micro-LED array. Background technique [0002] A full-color LED display is usually assembled by RGB three primary colors (red, green, blue) light-emitting units in a certain arrangement, and displays the dynamics of rich colors, high saturation and high display frequency by controlling the brightness of each group of light-emitting units image. However, the production process of a full-color LED display is very cumbersome. It is usually necessary to embed tens of thousands of LED light sources on the display panel. The requirements for the consistency of the wavelength, life and efficiency of each LED are very high, resulting in high production costs, The production efficiency is low, which greatly reduces the reliability of the final LED display. Moreover, the final size of the LED display ...

AI Technical Summary

Problems solved by technology

For this reason, the purpose of the present invention is to propose a method for preparing a full-color stacked epitaxial Micro-LED array, which uses a combination of MOCVD epitaxy technology and etching technology to epitaxially red light-emitting units (630nm ), green light-emitting unit (520nm), and blue light-emitting unit (450nm), and then use chip ICP etching technology to form a highly integrated tiny two-dimensional matrix, and the size of each light-emitting unit may ensure the performance of the device It can be reduced as much as possible under the premise, so as to effectively solve the problem of low screen resolution caused by the large size of a single light-emitting unit in the current LED display, which cannot be highly integrated and assembled.

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