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Memory structure and its formation method, memory circuit and its working method

A memory and gate structure technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as poor read stability, small read noise capacity, and impact on static memory static noise capacity.

Active Publication Date: 2020-11-27
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can be seen that the ratio of the width-to-length ratio of the pull-down transistor and the pass transistor will affect the static noise capacity of the static memory
[0006] However, the memory formed by the prior art still has the disadvantages of low read noise capacity and poor read stability

Method used

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  • Memory structure and its formation method, memory circuit and its working method
  • Memory structure and its formation method, memory circuit and its working method
  • Memory structure and its formation method, memory circuit and its working method

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Experimental program
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Embodiment Construction

[0061] The memory structure of the prior art has many problems, for example, the static noise capacity of the static memory is small, and the anti-interference ability is poor.

[0062] Combining with the memory of the existing technology, the reasons for the small static noise capacity and poor anti-interference ability of the memory are analyzed:

[0063] figure 1 It is a structural diagram of a static memory structure.

[0064] Please refer to figure 1 , the static memory includes: two mirror-symmetric inverters; the inverter includes: a substrate 100, and the substrate 100 includes: a transmission region 1, a pull-down region 2 and a pull-up region 3; The fins 101 on the substrate of the transfer region 1, the pull-down region 2 and the pull-up region 3, the fins 101 of the transfer region 1, the pull-down region 2 and the pull-up region 3 are identical to each other, and the transfer region 1 and the The fins 101 of the pull-down region 2 are connected to each other; t...

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Abstract

The present invention provides a memory structure and its forming method, a memory circuit and its working method, wherein the memory structure includes: a first pull-down transistor having a first channel width; a second pull-down transistor, The second pull-down transistor has a third channel width; a first pass transistor, the first pass transistor has a second channel width; a second pass transistor, the second pass transistor has a fourth channel width; The fourth channel width is smaller than the third channel width; or the second channel width is smaller than the first channel width; or the second channel width is smaller than the first channel width, and The fourth channel width is smaller than the third channel width. The memory structure can increase the static noise capacity of the memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a memory structure and its forming method, a memory circuit and its working method. Background technique [0002] With the development of information technology, the amount of stored information has increased dramatically. The increase in the amount of stored information has promoted the rapid development of memory, and at the same time put forward higher requirements for the stability of memory. [0003] A basic Static Random Access Memory (SRAM) relies on six transistors that form two cross-coupled inverters. Each inverter includes: a pull-up transistor, a pull-down transistor and an access transistor. [0004] In order to obtain sufficient anti-interference capability and reading stability, the transistors used to form the memory are mostly Fin Field-Effect Transistors (Fin Field-Effect Transistors, FinFETs). In FinFET transistors, the gate is a 3D struc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11H01L21/8244H10B10/00
CPCH10B10/18H10B10/12
Inventor 王楠
Owner SEMICON MFG INT (SHANGHAI) CORP