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Power module and control method thereof

A power module and power switch technology, which is applied in the direction of electrical components, transistors, electronic switches, etc., can solve the problems of unfavorable electromagnetic compatibility characteristics, limiting the performance of GaN power devices, and the inability to externally adjust the switching speed of power tubes, etc., to achieve improved electromagnetic compatibility. Compatibility features, performance-enhancing effects

Active Publication Date: 2018-05-25
DELTA ELECTRONICS INC
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Problems solved by technology

[0003] However, the existing power modules using GaN power semiconductor devices cannot externally adjust the switching speed of the power tube, which is very detrimental to the electromagnetic compatibility characteristics of the final product, and also limits the performance of GaN power devices from another perspective

Method used

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  • Power module and control method thereof
  • Power module and control method thereof

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Embodiment Construction

[0066] The technical scheme of the present invention is described in detail below in conjunction with accompanying drawing and specific embodiment, to better understand the technical scheme of the present invention, but the embodiment provided is not in order to limit the protection scope of the present invention, but the description of structure operation It is not intended to limit the order of its execution, and any device with equivalent functions produced by the recombination of components falls within the protection scope of the present invention. In addition, according to industry standards and common practices, the drawings are only used to assist in illustration and are not drawn to original scale. In fact, the dimensions of various features may be arbitrarily increased or decreased for ease of illustration. In the following description, the same components will be described with the same symbols to facilitate understanding.

[0067] The terms used in this specificati...

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Abstract

The invention provides a power module, comprising a gallium nitride power switch and a drive circuit. The gallium nitride power switch comprises a drain, a source and a gate. The drive circuit comprises an input end and an output end. The output end of the drive circuit is electrically coupled with the gate of the gallium nitride power switch through an external resistor and is used for changing acurrent of the gate of the gallium nitride power switch by adjusting a resistance value of the external resistor, thereby controlling switch-on or switch-off speed of the gallium nitride power switch. According to the power module provided by the invention, the current of the gate of the gallium nitride power switch is adjusted through utilization of the resistance value of the external resistor,further the switch-on or switch-off speed of the gallium nitride power switch is adjusted, the electromagnetic compatibility of a terminal product is improved, and the performance of the gallium nitride power switch is improved.

Description

technical field [0001] The invention relates to a power module and a control method of the power module, in particular to a power module with adjustable switching speed and a control method of the power module. Background technique [0002] As a typical representative of the third-generation semiconductor materials, gallium nitride (GaN), a wide-bandgap semiconductor, has many excellent properties that traditional silicon materials do not have. It is an excellent semiconductor material for high-frequency, high-voltage, high-temperature and high-power applications. With the advancement of gallium nitride technology, gallium nitride power semiconductor devices have broad application prospects in civilian and military fields. [0003] However, the existing power modules using GaN power semiconductor devices cannot externally adjust the switching speed of the power tube, which is very detrimental to the electromagnetic compatibility characteristics of the final product, and also...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687H03K17/042
CPCH03K17/04206H03K17/687
Inventor 宋海斌杨乐阳
Owner DELTA ELECTRONICS INC
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