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Etchant composition and method of fabricating integrated circuit device using the same

A composition and etchant technology, applied in the directions of surface etching compositions, electrical solid devices, chemical instruments and methods, etc., can solve problems such as complex connection and wiring structures, and achieve the effects of improving productivity and ensuring stability and reliability.

Active Publication Date: 2018-06-01
SAMSUNG ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the size of memory cells has been reduced to achieve high integration, operation (operation) circuits and connection wiring structures included in memory devices have become complicated

Method used

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  • Etchant composition and method of fabricating integrated circuit device using the same
  • Etchant composition and method of fabricating integrated circuit device using the same
  • Etchant composition and method of fabricating integrated circuit device using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0091] According to embodiments of the present inventive concept as described above, the etchant composition may include an etchant composition including various components in various amounts.

[0092] In order to selectively remove the nitride film, the etchant composition may be brought into contact with the oxide film and the nitride film simultaneously. In some embodiments, to contact the etchant composition with the structure, the substrate including the structure may be dipped in the etchant composition. In some other embodiments, in order to bring the etchant composition into contact with the structure, the etchant composition may be applied to the substrate including the structure, for example, by spray coating or spin coating.

[0093] In process P16, the etchant composition may be maintained at a temperature of about 50° C. to about 300° C. while the nitride film is selectively removed. For example, the etchant composition may be brought into contact with the struct...

Embodiment 1

[0142] A nitride film-to-oxide film etch selectivity was evaluated by using an etchant composition including various components in various amounts according to an embodiment of the inventive concept. The results are shown in Table 1.

[0143] [Table 1]

[0144]

Embodiment 2

[0148] In etching a nitride film by using the etchant composition according to an embodiment of the inventive concept, the influence of Si concentration in the etchant composition on the etching selectivity of the nitride film relative to the oxide film was evaluated.

[0149] For this evaluation, etchant compositions with various Si concentrations were prepared by adding different amounts of Si 3 N 4The films were dissolved in various test etchant compositions including the etchant composition of Example 1 according to Table 1 . In addition, forming on a silicon substrate by alternately stacking multiple TEOS films and multiple Si 3 N 4 A test structure obtained from the membrane and a cut region formed through the test structure. Next, the test structure is dipped in each of the etchant compositions having various Si concentrations, thereby selectively removing Si from the test structure through the cut region. 3 N 4 membrane.

[0150] Figure 7A is an image showing t...

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PUM

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Abstract

The invention relates to an etchant composition and a method of fabricating the integrated circuit device using the same. The etchant composition comprises inorganic acid, a siloxane chemical compound, an ammonium compound and a solvent. The siloxane chemical compound is expressed through a general formula (I). A method of fabricating an integrated circuit device includes forming a structure on asubstrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

Description

[0001] Cross References to Related Applications [0002] Priority is claimed for Korean Patent Application No. 10-2016-0157440 filed on November 24, 2016 and Korean Patent Application No. 10-2017 filed on May 25, 2017 at the Korean Intellectual Property Office -0064882, the entire contents of which are hereby incorporated by reference. technical field [0003] The inventive concepts herein relate to etchant compositions and methods of manufacturing integrated circuit devices using the same, and more particularly, to etchant compositions for etching nitride films and methods of manufacturing integrated circuit devices using the etchant compositions method. Background technique [0004] As multifunctional information communication devices have been developed recently, there has been a need to increase the capacity and integration of integrated circuit devices including memory devices used in such communication devices. As the size of memory cells has been reduced to achieve ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/04C09K13/06H01L21/311H10B41/27H10B43/27H10B43/35
CPCC09K13/04C09K13/06H01L21/31111C09K13/08H10B43/35H10B43/27H01L21/0254H01L21/02554H01L21/76834H01L29/518
Inventor 李轸雨金建伶韩勋林廷训李珍旭朴宰完
Owner SAMSUNG ELECTRONICS CO LTD