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A method for etching a substrate

A technology for substrates and etching chambers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high LED pre-voltage, difficult to clean polymers, etc., to reduce power consumption and reduce difficult-to-clean polymers , Solve the effect of high pre-stage voltage

Active Publication Date: 2020-01-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to overcome the above-mentioned defects in the prior art, the present invention provides a method for etching a substrate, which is used to solve the problem of hard-to-clean polymerization under the premise of ensuring sufficient etching selectivity during etching. The problem of high LED front-stage voltage caused by

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  • A method for etching a substrate
  • A method for etching a substrate
  • A method for etching a substrate

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Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

[0027] This embodiment provides an etching method for a substrate, on which a photoresist layer with a desired pattern is pre-formed, and the etching method includes: a rough etching stage, using the photoresist layer as a mask, The substrate is etched with a first etching gas, and the first etching gas contains C (carbon); in the fine etching stage,...

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Abstract

The invention provides a substrate etching method and relates to the technical field of semiconductors. The substrate etching method can solve a problem while providing the etching with sufficient etching selection ratio that the etching may generate polymer difficult to clean and thus causes high LED pre-stage voltage. A photoresist layer having a desired pattern is pre-formed on a substrate etched by the substrate etching method. The etching method comprises: a rough etching stage in which the photoresist layer is used as a mask and the substrate is etched by a first etching gas containing carbon; a fine etching stage in which the photoresist layer is used as a mask, the substrate subjected to the rough etching stage is etched by a second etching gas not containing carbon. The substrate etching method is suitable for etching a SiO2 thin film on a GaN substrate in a GaN-based LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for etching a substrate. Background technique [0002] GaN (gallium nitride)-based LEDs (Light-Emitting Diodes, light-emitting diodes) have the advantages of low power consumption, long life, and high luminous efficiency, and are widely used in high-power lighting, automotive instrument displays, and large-area outdoor displays. , signal lights, and general lighting and other fields. [0003] How to improve the light extraction efficiency of GaN-based LEDs is one of the important research directions in the field. In order to improve the light extraction efficiency of GaN-based LEDs, the current common practice is to coat a layer of SiO with a thickness of about 1.5 μm on the surface of the GaN substrate. 2 (Silicon Dioxide) film, then on SiO 2 A photoresist layer with the required pattern is formed on the film, and the photoresist layer is used as a mask for Si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L33/22H01L33/32
CPCH01L21/31116H01L21/31144H01L33/0075H01L33/22H01L33/32
Inventor 张君
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD