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Substrate etching method

A technology of substrate and etching chamber, which is applied in the field of substrate etching, can solve the problems of high LED front-stage voltage and difficult-to-clean polymers, reduce power consumption, reduce difficult-to-clean polymers, and solve problems before The effect of high stage voltage

Active Publication Date: 2017-03-15
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Application Information

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Problems solved by technology

[0005] In order to overcome the above-mentioned defects in the prior art, the present invention provides a method for etching a substrate, which is used to solve the problem of hard-to-clean polymerization under the premise of ensuring sufficient etching selectivity during etching. The problem of high LED front-stage voltage caused by

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Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0027] This embodiment provides a method for etching a substrate, on which a photoresist layer with a required pattern is pre-formed, and the etching method includes: a rough etching stage, using the photoresist layer as a mask, The first etching gas is used to etch the substrate, and the first etching gas contains C (carbon); in the fine etchin...

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Abstract

The invention provides a substrate etching method and relates to the technical field of semiconductors. The substrate etching method can solve a problem while providing the etching with sufficient etching selection ratio that the etching may generate polymer difficult to clean and thus causes high LED pre-stage voltage. A photoresist layer having a desired pattern is pre-formed on a substrate etched by the substrate etching method. The etching method comprises: a rough etching stage in which the photoresist layer is used as a mask and the substrate is etched by a first etching gas containing carbon; a fine etching stage in which the photoresist layer is used as a mask, the substrate subjected to the rough etching stage is etched by a second etching gas not containing carbon. The substrate etching method is suitable for etching a SiO2 thin film on a GaN substrate in a GaN-based LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a substrate etching method. Background technique [0002] GaN (gallium nitride)-based LED (Light-Emitting Diode, light-emitting diode) has the advantages of low power consumption, long life, and high luminous efficiency, and is widely used in high-power lighting, automotive instrument display, and large-area outdoor display screens , signal lights, and general lighting and other fields. [0003] How to improve the light extraction efficiency of GaN-based LEDs is one of the important research directions in the field. In order to improve the light extraction efficiency of GaN-based LEDs, the current common practice is to coat a layer of SiO with a thickness of about 1.5 μm on the surface of the GaN substrate. 2 (silicon dioxide) film, then on SiO 2 A photoresist layer with the required pattern is formed on the film, and the photoresist layer is used as a mask for SiO 2 T...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L33/22H01L33/32
CPCH01L21/31116H01L21/31144H01L33/0075H01L33/22H01L33/32
Inventor 张君
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD