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Large bandwidth silicon-based optical modulator

A technology of silicon-based optical modulators and large bandwidth, which is applied in the field of silicon photonics, can solve the problems of narrow modulation range of silicon-based optical modulators, and achieve the effects of improving the range and sensitivity, increasing the modulation width, and improving the modulation bandwidth

Active Publication Date: 2018-06-12
SHANGHAI IND U TECH RES INST +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a silicon-based optical modulator with a large

Method used

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  • Large bandwidth silicon-based optical modulator

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Experimental program
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Embodiment 1

[0037] like figure 1 As shown, this embodiment provides a wide bandwidth silicon-based optical modulator 1, comprising: a substrate and an insulating layer 102 thereon; an n-type doped silicon layer 103 located on the insulating layer 102; a p-type doped silicon layer 102; The silicon layer 112 is located on the n-type doped silicon layer 103; the ferroelectric thin film 113 is located on the p-type doped silicon layer 112; wherein the n-type doped silicon layer 103 is grounded, and the The p-type doped silicon layer 112 is connected to the control signal, and the ferroelectric thin film 113 is connected to the control signal.

[0038] As an example, the ferroelectric thin film 113 has a thickness of 200-500 nm. The orientation of the ferroelectric thin film 113 is orientation. The orientation of the p-type doped silicon layer 112 is orientation. The ferroelectric film 113 of the present invention can be ferroelectric materials such as bismuth ferrite film, lanthanum mang...

Embodiment 2

[0043] like figure 2 As shown, this embodiment provides a working state of the large-bandwidth silicon-based optical modulator 1 as in Embodiment 1 when the voltage of the control signal is relatively small. At this time, the ferroelectric thin film 113 is in a positively polarized state, and negative polarized charges appear on the contact surface between the ferroelectric polarization layer and the p-type doped silicon layer 112, and the free carriers in the p-type doped silicon layer 112, that is, electrons, are driven ions, so that the free carrier concentration in the p-type doped silicon layer 112 decreases.

Embodiment 3

[0045] like image 3 As shown, this embodiment provides a working state of the large-bandwidth silicon-based optical modulator 1 as in Embodiment 1 when the voltage of the control signal is relatively high. At this time, the ferroelectric thin film 113 is in the polarization reversal state, and positive polarized charges appear on the contact surface between the ferroelectric polarized layer and the p-type doped silicon layer 112, and the attraction of the polarized charges makes the p-type doped silicon layer 112 appear The extra electrons increase the concentration of free carriers in the p-type doped silicon layer 112 .

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Abstract

The invention provides a large bandwidth silicon-based optical modulator. The silicon-based optical modulator comprises a base, an insulating layer on the base, an n-type doped silicon layer located above the insulating layer, a p-type doped silicon layer located above the n-type doped silicon layer and a ferroelectric thin film located above the p-type doped silicon layer. The n-type doped silicon layer is grounded, the p-type doped silicon layer receives a control signal, and the ferroelectric film receives the control signal. The ferroelectric thin film is effectively integrated with a common silicon-based optical modulator, and by utilizing the field strength when the ferroelectric thin film is polarized, the concentration change range and sensitivity of current carriers in the opticalmodulator are greatly improved, and therefore the modulation bandwidth of the optical modulator is increased. The silicon-based optical modulator can be directly used and also used for two arms of aMach-Zehnder-type optical modulator, and the modulation width of the modulator can be further increased when the silicon-based optical modulator is used for the two arms of the Mach-Zehnder-type optical modulator. The silicon-based optical modulator is simple in structure, convenient to control, compatible with CMOS in process and very suitable for industrial popularization.

Description

technical field [0001] The invention belongs to the technical field of silicon photons, and in particular relates to a novel high-speed silicon-based optical modulator which utilizes the polarization effect of a ferroelectric thin film to increase the modulation bandwidth. Background technique [0002] With the rise of smart devices and the popularity of social networks, the volume of communication traffic has shown explosive growth. Due to the increase in the number of transistors and the doubling of chip throughput, the traditional electrical interconnection technology faces the problems of excessive power consumption and high delay. Currently, the electricity consumed by global computing centers alone accounts for 0.8% of the world's total power generation. The development of silicon photonics technology provides an effective way to solve these problems. On the one hand, the manufacturing process of silicon-based integrated optical devices is fully compatible with microe...

Claims

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Application Information

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IPC IPC(8): G02F1/05
CPCG02F1/0516G02F1/0533
Inventor 武爱民何兵仇超盛振高腾甘甫烷王曦
Owner SHANGHAI IND U TECH RES INST