Heating coil for preparing zone-melting and large-diameter monocrystal

A heating coil, large-diameter technology, applied in induction heating, coil device, single crystal growth, etc., can solve the problems of single crystal growth failure, polysilicon thorns, and belts in the melting zone, etc., to improve melting conditions and save raw materials. , Improve the effect of coil life

Active Publication Date: 2018-06-19
GRINM SEMICONDUCTOR MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the thermal field is not suitable during the growth of single crystal, it is easy to have thorns in the polysilicon mat

Method used

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  • Heating coil for preparing zone-melting and large-diameter monocrystal
  • Heating coil for preparing zone-melting and large-diameter monocrystal

Examples

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Example Embodiment

[0014] The specific embodiments of the present invention are further described below with reference to the accompanying drawings, but the protection scope of the present invention is not limited to the following specific embodiments.

[0015] The heating coil of the present invention is used for preparing zone melting large diameter single crystal. Such as figure 1 and figure 2 As shown, the center of the loop 1 is an annular needle eye 2 that penetrates the upper and lower surfaces of the loop. On the outer circumference of the needle eye 2 there are four guide slits that penetrate the upper and lower surfaces of the loop at 90° intervals. These diversion slits are distributed in a cross, including one main flow slit 3 and three side diversion slits 4. The main flow slot 3 extends to the outside of the coil and is connected to the flange 5 connecting the electrode. The three side guide slits 4 are designed as a superimposed V-shaped structure with an inner width and a narrow ...

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Abstract

The invention discloses a heating coil for preparing a zone-melting and large-diameter monocrystal. A circular ring-shaped pin hole penetrating through the upper surface and the lower surface of the coil is formed in the center of the coil, four flow guide seams penetrating through the upper surface and the lower surface of the coil are formed in the periphery of the pin hole at equal intervals, and one flow guide seam extends out of the coil and is connected with a flange of a connection electrode; the structure of the other three flow guide seams is that the part connected with the pin holeis a crack with consistent width, and the part away from the pin hole is of a V-shaped structure. According to the coil, one stable and uniform growing thermal field can be provided, the melting condition of loading is improved, problems of burring, wrapping, belt forming and the like are solved, the loading is enabled to be smooth, meanwhile, temperature gradient and thermal stress in a melt canbe reduced, crystallization rate is increased, besides, raw materials for preparation of the coil are saved, and the service life of the coil is prolonged.

Description

technical field [0001] The invention relates to a heating coil for preparing a zone-melting large-diameter single crystal, which belongs to the technical field of integrated circuits. Background technique [0002] Silicon material is widely used as an important semiconductor material, and the growth and preparation process of silicon single crystal is also continuously improved. For the zone melting silicon single crystal grown by the zone melting method, as the diameter of the growing single crystal increases, the electromagnetic field distribution around the single crystal and its own temperature distribution gradient become larger, and the difficulty of crystallization of the single crystal increases. . [0003] The thermal field of zone melting single crystal plays a key role in the growth of single crystal. If the thermal field is not suitable during the growth of the single crystal, it is easy to have thorns in the polysilicon material, remelting in the melting zone,...

Claims

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Application Information

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IPC IPC(8): C30B13/20C30B29/06H05B6/36
CPCC30B13/20C30B29/06H05B6/36
Inventor 李宗峰付斌李青保王永涛陈海滨李明飞
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
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