Heating coil for preparing zone-melting and large-diameter monocrystal

Abstract

The invention discloses a heating coil for preparing a zone-melting and large-diameter monocrystal. A circular ring-shaped pin hole penetrating through the upper surface and the lower surface of the coil is formed in the center of the coil, four flow guide seams penetrating through the upper surface and the lower surface of the coil are formed in the periphery of the pin hole at equal intervals, and one flow guide seam extends out of the coil and is connected with a flange of a connection electrode; the structure of the other three flow guide seams is that the part connected with the pin holeis a crack with consistent width, and the part away from the pin hole is of a V-shaped structure. According to the coil, one stable and uniform growing thermal field can be provided, the melting condition of loading is improved, problems of burring, wrapping, belt forming and the like are solved, the loading is enabled to be smooth, meanwhile, temperature gradient and thermal stress in a melt canbe reduced, crystallization rate is increased, besides, raw materials for preparation of the coil are saved, and the service life of the coil is prolonged.

Description

technical field [0001] The invention relates to a heating coil for preparing a zone-melting large-diameter single crystal, which belongs to the technical field of integrated circuits. Background technique [0002] Silicon material is widely used as an important semiconductor material, and the growth and preparation process of silicon single crystal is also continuously improved. For the zone melting silicon single crystal grown by the zone melting method, as the diameter of the growing single crystal increases, the electromagnetic field distribution around the single crystal and its own temperature distribution gradient become larger, and the difficulty of crystallization of the single crystal increases. . [0003] The thermal field of zone melting single crystal plays a key role in the growth of single crystal. If the thermal field is not suitable during the growth of the single crystal, it is easy to have thorns in the polysilicon material, remelting in the melting zone,...

AI Technical Summary

Problems solved by technology

If the thermal field is not suitable during the growth of single crystal, it is easy to have thorns in the polysilicon material, remelting in the melting zone, belt out of the melting zone, etc., resulting in the failure of single crystal growth

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