A method for controlling the wavelength of light-emitting diodes
A light-emitting diode and wavelength control technology, applied in the field of lighting, can solve the problems of different heating temperatures of epitaxial wafers, consistent crystal quality of epitaxial wafers, poor uniformity, and difficulty in maintaining consistency between batches before and after. Good uniformity and consistency
Active Publication Date: 2020-02-21
苏州达亚电子有限公司
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Problems solved by technology
In continuous production, fluctuations in substrate materials and process conditions during deposition will cause different degrees of warping of epitaxial wafers between different batches (specifically between different furnaces). It is difficult to maintain the consistency of the wavelength between batches during control. At the same time, different warpages cause the epitaxial wafers to be heated at different temperatures, and the temperature will have an important impact on the quality of the epitaxial crystallization. The final crystallization quality of the epitaxial wafers is poor in consistency and uniformity.
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[0032] A light-emitting diode wavelength control method provided by the present invention will be described in more detail below in conjunction with the accompanying drawings, wherein a preferred embodiment of the present invention is shown, it should be understood that those skilled in the art can modify the present invention described here, and still achieve Advantageous effects of the present invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.
[0033] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of ill...
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Abstract
The invention provides an LED wavelength control method. The method comprises the following steps that a preset temperature which equals a preset surface temperature of a wafer carrier disk and corresponds to a standard temperature is set when a quantum well structure is deposed, and the standard temperature is the standard surface temperature of a substrate; the practical surface temperature of the wafer carrier disk and the practical surface temperature of the substrate when the quantum well structure is deposed are obtained; according to a difference between the practical surface temperature of the substrate and the standard surface temperature of the substrate, the preset temperature is corrected to obtain a correction temperature; and the correction temperature is output so that the practical surface temperature of the wafer carrier disk equals the correction temperature. According to the control method, the surface temperature of the wafer carrier disk is corrected by utilizing the detected surface temperature of the substrate, the LED wavelength is kept consistent when substrates in different batches in the batch production warp differently, and the yield rate of products isimproved.
Description
technical field [0001] The invention relates to the technical field of lighting, in particular to a method for controlling the wavelength of a light-emitting diode. Background technique [0002] Light Emitting Diodes (Light Emitting Diodes, LEDs) are widely used in various fields due to their advantages of long life and low energy consumption. Especially with the substantial improvement of the lighting performance index of light emitting diodes, light emitting diodes are often used in light emitting devices. Among them, the III-V compound semiconductors represented by gallium nitride (GaN) have the characteristics of wide band gap, high luminous power, high electron saturation drift speed, and stable chemical properties. Optoelectronic devices and other fields have great application potential and have attracted widespread attention. [0003] The basic structure of gallium nitride (GaN) light-emitting diodes includes a PN junction composed of an N-type gallium nitride layer...
Claims
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IPC IPC(8): H01L33/04H01L33/00H01L21/02
CPCH01L21/02656H01L33/0075H01L33/04
Inventor 李丹丹
Owner 苏州达亚电子有限公司