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Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device

A technology of luminescent materials and energy level structure, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, luminescent materials, etc., can solve the problems that cannot meet the requirements of luminescent materials of semiconductor devices, and the luminous performance needs to be improved, so as to meet the comprehensive performance requirements , Efficient luminous efficiency effect

Active Publication Date: 2022-08-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a luminescent material with a funnel-shaped energy level structure, a preparation method and a semiconductor device, aiming to solve the problem that the luminescent performance of the existing luminescent material needs to be improved and cannot meet the requirements of semiconductor devices for luminescence. material requirements

Method used

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  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device
  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device
  • Light-emitting material with funnel-type energy level structure, preparation method and semiconductor device

Examples

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Effect test

Embodiment 1

[0102] Example 1: Preparation of quantum dots based on CdZnSeS / CdZnSeS

[0103] First, the precursor of cationic Cd, the precursor of cationic Zn, the precursor of anionic Se and the precursor of anionic S are injected into the reaction system to form Cd y Zn 1-y Se b S 1-b layer (where 0≤y≤1, 0≤b≤1); continue to inject the precursor of cation Cd, the precursor of cation Zn, the precursor of anion Se and the precursor of anion S into the reaction system, in the above Cd y Zn 1-y Se b S 1-b Cd is formed on the surface of the layer z Zn 1-z Se c S 1-c layer (where 0≤z≤1, and z is not equal to y, 0≤c≤1); under certain reaction conditions such as heating temperature and heating time, Cd in the inner and outer nanocrystals (that is, the above two-layer compounds) will interact with each other. The exchange of Zn ions; since the migration distance of cations is limited and the longer the migration distance, the less chance of migration, it will y Zn 1-y Se b S 1-b Laye...

Embodiment 2

[0104] Example 2: Preparation of quantum dots based on CdZnS / CdZnS

[0105] First, the precursor of cationic Cd, the precursor of cationic Zn and the precursor of anion S are injected into the reaction system to form Cd first. yZn 1-y S layer (where 0≤y≤1); Continue to inject the precursor of cationic Cd, the precursor of cationic Zn and the precursor of anionic S into the reaction system, and the above-mentioned Cd y Zn 1-y Cd is formed on the surface of the S layer z Zn 1-z S layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals (that is, the above two-layer compounds) occurs. ; Since the migration distance of cations is limited and the longer the migration distance is, the less chance of migration occurs, so it will be in the Cd y Zn 1-y S layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content ...

Embodiment 3

[0106] Example 3: Preparation based on CdZnSe / CdZnSe quantum dots

[0107] First, the precursor of cationic Cd, the precursor of cationic Zn and the precursor of anionic Se are injected into the reaction system to form Cd first y Zn 1-y Se layer (where 0≤y≤1); Continue to inject the precursor of cationic Cd, the precursor of cationic Zn and the precursor of anionic Se into the reaction system, and the above-mentioned Cd y Zn 1-y Cd is formed on the surface of the Se layer z Zn 1-z Se layer (where 0≤z≤1, and z is not equal to y); under certain reaction conditions such as heating temperature and heating time, the exchange of Cd and Zn ions in the inner and outer nanocrystals occurs; due to the limited migration distance of cations And the farther the migration distance is, the smaller the probability of migration occurs, so it will be in the Cd y Zn 1-y Se layer and Cd z Zn 1-z A graded alloy composition distribution of Cd content and Zn content is formed near the interf...

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Abstract

The present invention discloses a luminescent material with a funnel-type energy level structure, a preparation method and a semiconductor device, wherein the luminescent material comprises N quantum dot structural units sequentially arranged in the radial direction, wherein N≥2; the quantum The point structure units include A1 and A2 types, the A1 type is a graded alloy composition structure with a wider energy level width in the radial direction; the A2 type is a uniform composition structure with a uniform energy level width in the radial direction ; The interior of the luminescent material is composed of at least one layer of A1 type quantum dot structural units, and the outside of the luminescent material is composed of at least one layer of A2 type quantum dot structural units; Adjacent quantum dot structures in the radial direction In the unit, the energy level width of the quantum dot structural unit near the center of the luminescent material is not greater than the energy level width of the quantum dot structural unit far from the center of the luminescent material; and the energy level of the quantum dot structural unit of the adjacent graded alloy composition structure is continuously.

Description

technical field [0001] The present invention relates to the field of luminescent materials, in particular to a luminescent material having a funnel-type energy level structure, a preparation method and a semiconductor device. Background technique [0002] Quantum dots are special materials that are confined to the nanometer scale in three dimensions. This remarkable quantum confinement effect makes quantum dots have many unique nanometer properties: continuous tunable emission wavelength, narrow emission wavelength, Wide absorption spectrum, high luminescence intensity, long fluorescence lifetime and good biocompatibility. These characteristics make quantum dots have broad application prospects in the fields of flat panel display, solid-state lighting, photovoltaic solar energy, and biomarkers. Especially in the field of flat panel display applications, quantum dot light-emitting diodes (QLEDs) based on quantum dot materials have been used in display image quality, device p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50C09K11/88
CPCC09K11/02C09K11/565C09K11/883B82Y20/00B82Y30/00B82Y40/00H10K50/115
Inventor 刘政杨一行钱磊
Owner TCL CORPORATION
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